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Processing method of phase change memory

A phase-change memory and phase-change storage technology, applied in the field of semiconductors

Inactive Publication Date: 2017-04-19
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to overcome the present problems, the present invention provides

Method used

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  • Processing method of phase change memory

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Embodiment 1

[0034] In order to solve the problems in the prior art, the present invention provides a processing method for phase change memory, and the method of the present invention will be further described below in conjunction with the accompanying drawings. in, figure 1 It is a structural schematic diagram of the processing method of the phase change memory described in a specific embodiment of the present invention; figure 2 It is a schematic structural diagram of the phase change memory described in a specific embodiment of the present invention; image 3 It is a schematic diagram of pulse voltage applied in a specific embodiment of the present invention.

[0035] The invention discloses a processing method of a phase-change memory, a processing method of a phase-change memory. The phase-change memory includes a transistor and a phase-change storage resistance unit, and the drain of the transistor is connected to the phase-change storage resistance unit. electrically connecting,...

Embodiment 2

[0057] In order to solve the problems in the prior art, the present invention provides a processing method for phase change memory, and the method of the present invention will be further described below in conjunction with the accompanying drawings. in, figure 1 It is a structural schematic diagram of the processing method of the phase change memory described in a specific embodiment of the present invention; figure 2 It is a schematic structural diagram of the phase change memory described in a specific embodiment of the present invention; image 3 It is a schematic diagram of pulse voltage applied in a specific embodiment of the present invention.

[0058] In order to solve the problems in the prior art, the present invention provides a processing method for phase change memory, and the method of the present invention will be further described below in conjunction with the accompanying drawings. in, figure 1 It is a structural schematic diagram of the processing method ...

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Abstract

The invention relates to a processing method of a phase change memory. The phase change memory comprises a transistor and a phase change memory resistance unit, wherein the drain electrode of the transistor is electrically connected with the phase change memory resistance unit. The method comprises the following steps: S1, applying voltage to the grid electrode of the transistor to conduct the transistor, enabling one end of a phase change material layer at which anions are aggregated in the phase change memory resistance unit to electrically connect with the cathode of a pulse power supply, and enabling one end of the phase change material layer at which cations are aggregated to electrically connect with the anode of the pulse power supply; and S2, applying pulse voltage to recover the cations which are migrated and to restore compositions of the phase change material layer which is subjected to composition segregation to normal. According to the processing method disclosed by the invention, the cations which are migrated can be recovered to repair the compositions of the phase change material layer, and thus the amorphization operation (RESET) of PCRAM succeeds, and the performance of PCRAM can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, and in particular, the invention relates to a processing method of a phase-change memory. Background technique [0002] With the development of information technology, especially the popularity of mobile phones and other portable electronic devices, the application of non-volatile memory chips has penetrated into all aspects of modern human life. Flash memory (FlashMemory), as a typical non-volatile memory, has been greatly developed in the past ten years, but after the semiconductor technology enters the 22nm node, the flash memory technology based on floating gate charge storage has encountered difficulties in reducing the size . At this time, Phase Change Random Access Memory (PCRAM: Phase Change Random Access Memory) technology is currently widely used due to its superiority over flash memory technology in terms of cell area, read and write speed, read and write times, and data retention time. ...

Claims

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Application Information

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IPC IPC(8): G11C13/00
Inventor 李莹
Owner SEMICON MFG INT (SHANGHAI) CORP