CMOS nonvolatile memory unit circuit

Abstract

The invention discloses a CMOS nonvolatile memory unit circuit having four signal input ports which respectively are CTR, T, W and EN, and two signal output ports which respectively are OUT1 and OUT2. The circuit is composed of five PMOS transistors PM1-PM5 and a capacitor C1. The grids of the transistors PM1 and PM2 are connected with a port of the capacitor C1 to form a floating storage charge node; the grid of the transistor PM3 is earthed, and serve as a reference transistor when data is read; and the transistors PM4 and PM5 are used as switches for controlling data output of the memory unit. The circuit has the characteristics of simple technological process, shorter processing time and lower cost; in addition, the electron tunneling transistor of the circuit and the data read transistor are achieved by the different transistors, influence of electron injection and erasing operations on reading performance of the memory unit is avoided, an external electric field used during electron erasing is stronger than that used during electron injection, and a data writing speed is improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a CMOS nonvolatile memory unit circuit, which can be realized based on a single-layer polysilicon CMOS process, and is especially suitable for use in ultra-low power consumption and low-cost embedded nonvolatile memory chips. [0002] technical background [0003] Non-volatile memory based on single-layer polysilicon CMOS technology can realize reliable data storage after power failure. Compared with EEPROM and FLASH memory, its advantages are simple process flow, short production cycle, and low production cost. Applications that require small-capacity storage after power-on have good application prospects, such as the calibration of analog / RF circuits and the storage of key circuit parameters. The non-volatile memory realized by single-layer polysilicon CMOS technology can avoid the use of small-capacity EEPROM or FLASH memory, which will lead to increased product pro...

AI Technical Summary

Problems solved by technology

On the other hand, this kind of memory usually uses a single voltage for electronic erasing and electron injection, which takes longer time during the electronic erasing operation, resulting in an increase in data writing or erasing time

In addition, memory usually uses the same transistor for electronic tunneling and data reading. As the working time increases, electronic tunneling can lead to changes in the threshold voltage of the transistor, which affects the reliability of later data reading.

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