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Method for forming epitaxial layer

An epitaxial layer, vapor deposition method, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as easy damage, affect device performance, unstable passivation layer, etc., to improve performance, avoid penetration effect

Inactive Publication Date: 2017-04-19
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Since the passivation layer formed by hydrogen is not stable, it is easily destroyed after bonding with the dangling bonds, so that the dangling bonds are exposed again, thus affecting the performance of the device

Method used

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  • Method for forming epitaxial layer

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Embodiment Construction

[0024] The method for forming the epitaxial layer of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the advantages of the present invention Effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0025] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such ...

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Abstract

The invention discloses a method for forming an epitaxial layer. When a vapor deposition method is employed to form an epitaxial layer, carrier gas including deuterium is used. Within a deuterium environment, deuterium atoms exit in the formed epitaxial layer. The deuterium atoms can be diffused during subsequent formation of a gate oxide layer or a device and bonded with dangling bonds in an interface to form a stable structure, thereby preventing carrier penetration and improving device performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming an epitaxial layer. Background technique [0002] In the field of semiconductor device manufacturing, a layer of single crystal silicon is usually formed on a silicon substrate as an epitaxial layer, and the epitaxial layer can be subsequently ion-implanted and doped to form an implanted base region, an emitter region, and the like. [0003] As the dimensions of modern microelectronic devices continue to shrink, the quality challenges of epitaxial layers are increasing. The quality of the epitaxial layer depends on the size and distribution of microdefects grown inside it. During the formation of the epitaxial layer, most of the micro-defects gather in the silicon-vacancies or fill in the gaps. [0004] The use of hydrogen to form a passivation layer has been widely known and commonly used in the field of semiconductor device manufacturing. In th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02532H01L21/0257H01L21/0262H01L21/28211H01L21/02381H01L21/02598H01L21/02634H01L21/02293H01L21/02631H01L21/324H01L21/28167H01L21/02041H01L21/02123H01L21/02057H01L21/02658H01L21/31111
Inventor 肖德元张汝京
Owner ZING SEMICON CORP