Nitride-based power switch device and preparation method thereof

Abstract

The present invention provides a nitride-based power switch device and a preparation method thereof. A P-type gallium nitride epitaxial layer is grown at the upper portion of a light-doped N-type gallium nitride epitaxial wafer; the P-type gallium nitride epitaxial layer and the light-doped N-type gallium nitride epitaxial wafer are subjected to etching to form a field ring structure penetrating the P-type gallium nitride epitaxial layer or penetrating the P-type gallium nitride epitaxial layer and stretching into the light-doped N-type gallium nitride epitaxial wafer; and the light-doped N-type gallium nitride epitaxial layer is grown at the upper portion of the P-type gallium nitride epitaxial layer including the yield ring structure, wherein the field ring structure includes at least one channel structure. The epitaxial method is employed replace the ion implantation method to form the P-type doped structure in the nitride-based power switch device. The impurity effective activation rate is high, the problem is avoided that the annealing technology is employed to improve the impurity effective activation rate in the ion implantation so as to reduce the difficulty of the technology realization.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a gallium nitride-based power switching device and a manufacturing method thereof. Background technique [0002] With the improvement of people's requirements for semiconductor devices, GaN-based power switching devices have attracted more and more attention due to their unique energy band characteristics and excellent electrical and optical properties, while improving breakdown voltage and reducing leakage current have been It is an important challenge for power switching devices. For silicon-based power switching devices or silicon carbide-based power switching devices, a good field ring design can increase the breakdown voltage of the power switching device and reduce leakage current. Considering the effective activation rate of impurities, the field ring design depends on ion implantation To achieve P-type doping. However, for GaN-based power switching devices...

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Problems solved by technology

However, for GaN-based power switching devices, there is no field ring design yet. One of the reasons is that the effective activation rate of impurities in GaN-based power switching devices is likely to be low when ion implantation is used. After ion implantation, annealing technology must be used to improve Effective activation rate of impurities

[0003] In the process of realizing the present invention, the inventors found that there are at least the following technical problems in the prior art: the field ring design of GaN-based power switching devices is difficult to achieve P-type doping by means of ion implantation

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