A kind of fabrication method of soi FinFET based on bulk silicon

Abstract

The invention provides an SOI FinFET manufacturing method based on bulk silicon, and the method comprises the steps: arranging an opening on a germanium-silicon layer during the epitaxy of the germanium-silicon layer, and enabling the germanium-silicon layer to be broken at the opening; carrying out the filling of a part with a FiN structural layer material during the subsequent epitaxy of the FiN structural layer; enabling the FiN structural layer at the opening to serve as an etching stopping layer of the germanium-silicon layer during the subsequent etching removal of the germanium-silicon layer because the etching rate of the germanium-silicon layer is far greater than the etching rate of the FiN structural layer, thereby enabling the size of the FiN structural layer at the opening to be determined by the size of the opening, and enabling the size of the FiN structural layer at the opening to be controlled easily. In other words, the size of a buried oxidation layer formed subsequently is easier to control, thereby solving problems that Fin is liable to be inclined because of the excessively small size of the buried oxidation layer or the oxidation is not complete because of the excessively large size of the buried oxidation layer, and improving the performance of an SOI FinFET device based on the bulk silicon.

Description

technical field [0001] The invention relates to the field of semiconductor process manufacturing, in particular to a method for manufacturing a bulk silicon-based SOI (Silicon-On-Insulator, silicon-on-insulator substrate) FinFET (Fin Field-Effect Transistor). Background technique [0002] At present, with the reduction of critical dimensions of semiconductor devices and the improvement of low power consumption and high speed requirements for semiconductor devices, 14nm / 16nm and below technologies have formed a tripartite situation of FD-SOI planar devices, bulk silicon FinFETs and SOI FinFETs. SOI FinFET combines the common advantages of both SOI and FinFET. [0003] figure 1 It is a schematic diagram of a three-dimensional structure of an SOI FinFET. Such as figure 1 As shown, the SOI FinFET includes: a semiconductor substrate 10 on which a protruding fin (Fin) 14 is formed; an oxide layer 11 covering the surface of the semiconductor substrate 10 and a part of the sidew...

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Problems solved by technology

[0005] In view of this, the present invention provides a method for manufacturing SOI FinFET based on bulk silicon, so as to solve the problem that Fin dumping or BOX layer cannot be completely oxidized to form an insulating layer during the manufacturing process of SOI FinFET in the prior art.

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