A method for particle monitoring of a multi-step dry etching machine

Abstract

The invention discloses a particle monitoring method of a multi-step dry method etching machine. By adding a full-step particle monitoring method for shortening time on the basis of a single-step particle monitoring method, all particles generated by the multi-step dry method etching machine are effectively monitored, detection on particular distribution of the particles and specification control on large particles are added, the particle monitoring sensitivity is improved, and the probability of a product accident is reduced.

Description

technical field [0001] The invention relates to the field of production control of semiconductor manufacturing factories, and more specifically, to a method for particle monitoring of a multi-step dry etching machine. Background technique [0002] In order to meet the requirements of critical size reduction and even one-time molding, the advanced dry etching process requires multiple steps of etching in the same etching chamber, and sequentially etch different film qualities, that is, multi-step dry etching. etched. As the critical dimension requirements of semiconductor integrated circuits are getting smaller and smaller, the requirements for detecting the size and number of particles generated during the multi-step dry etching process are also correspondingly increased. Therefore, a method for improving the sensitivity of particle monitoring is needed to improve the yield of products. [0003] The existing particle monitoring method is to put the detection piece into the...

AI Technical Summary

Problems solved by technology

The single-step particle monitoring method refers to using only one etching step in the multi-step dry etching process, and adopts the same reaction conditions as the actual etching step (including reaction gas, the order of feeding gas, pressure, temperature and Reaction time, etc.), the disadvantage is that the particles generated in the remaining steps are ignored. However, for the multi-step dry etching process, the corresponding etching conditions for each step are quite complicated, and the parameters such as gas pressure and power between steps vary greatly. Particles are more likely to fall during the conversion of each step. Obviously, the single-step particle monitoring method can no longer meet the requirements of the improvement of particle monitoring sensitivity due to the reduction of critical size.

The full-step particle monitoring method refers to the use of all steps of the multi-step dry etching process, using the same reaction conditions as the actual etching process (including the reaction gas, the sequence of gas introduction, pressure, temperature, and reaction time, etc.), The advantage is that it can monitor all the particles produced by the multi-step dry etching machine, but the disadvantage is that the test piece has to go through a long plasma process, which is easy to damage the surface of the test piece (the bombardment time of the single-step plasma is short, and it is not easy to damage the surface of the test piece ), resulting in confusion of the particle detection data; at the same time, the change of the reaction conditions when the steps are switched is likely to generate more condensation defects, resulting in more confusion of the particle detection data, making it impossible to judge the detection results, such as figure 1 shown

Images