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LED epitaxial structure

An epitaxial structure, hole blocking layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of neglect, leakage, and hole leakage intensified, and achieve the effect of improving luminous efficiency

Active Publication Date: 2017-05-10
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Current LEDs mainly include N-type layers, GaN\InGaN multiple quantum wells, and P-type layers. Since the mobility of electrons is much greater than that of holes, it is customary to design electron blocking layers after MQW to reduce electron leakage, but in In the actual LED structure, there are a large number of V-type defects in the multi-quantum well layer, and a large number of holes will be injected into the MQW through the V-type defects, and leak through the MQW into the superlattice layer and the N-type layer, resulting in entering the MQW to participate in radiative luminescence. The number of holes decreases, and the hole leakage increases with the increase of the driving current, resulting in obvious hole leakage of some high-current LED products
[0003] Although the hole barrier layer disclosed in the existing patent CN105917478A plays a role in preventing holes from leaking into the superlattice layer and the N-type layer, it has not paid attention to the actual LED structure, because the V on the superlattice layer V-shaped defects lead to changes in the hole injection method and path. Often, the thickness of the hole barrier layer in the a direction perpendicular to the V-shaped defect sidewall is much smaller than the vertical c direction. In the traditional structure, the thickness ratio of the two is about 0.25.
Causes holes to easily pass through the hole barrier layer of the transport mode such as tunneling from the a direction, but the effect of preventing hole leakage is not good

Method used

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Examples

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Embodiment 1

[0028] see figure 1 with figure 2 , for an LED epitaxial structure implemented in the present invention, it includes from bottom to top: a substrate 1, a first conductivity type semiconductor layer 2, a superlattice layer 3 with V-shaped pits, a hole blocking layer 4, and an active region The light emitting layer 5 and the second conductivity type semiconductor layer 6 . The first conductive type semiconductor layer 2 includes N-GaN, or U-GaN and N-GaN, and the second conductive type semiconductor layer 2 includes at least P-GaN.

[0029] During the growth process of growing LEDs, many defects such as dislocations are generated, and some dislocations extend along the growth direction and penetrate the entire LED structure. When the dislocation enters the superlattice layer 3, by controlling the growth conditions of the superlattice layer 3, at the penetrating dislocation position, the V-shaped pit nucleates and grows to release the stress. The material In of the superlattic...

Embodiment 2

[0034] see image 3 The difference between this embodiment and Embodiment 1 is that the first conductivity type semiconductor layer 2 includes an N-GaN layer, or includes a U-GaN layer and an N-GaN layer, and the second conductivity type semiconductor layer 6 includes an electron blocking layer 61 and P-GaN 62. On the basis of Embodiment 1, an electron blocking layer 61 is provided on the second conductivity type semiconductor layer 6 to prevent electrons from leaking from the light emitting layer 5 in the active region to the P-GaN 62 and reduce the luminous efficiency. The material of the electron blocking layer 61 can be a single-layer AlGaN structure or an AlGaN / GaN superlattice structure or an AlGaN / InGaN superlattice structure or an AlGaN / InGaN / GaN superlattice structure, and can be partially doped with Mg or fully doped with Mg or non- doping.

Embodiment 3

[0036] see Figure 4The difference between this embodiment and Embodiment 1 is that the second conductivity type semiconductor layer 6 includes a hole injection layer 63 and a P-GaN 62 . In the V-shaped pit of the light-emitting layer 5 in the active area, a hole injection layer 63 is set to promote holes from P-GaN 62 to enter the light-emitting layer 5 in the active area, thereby improving the light coupling efficiency, wherein the hole injection layer 63 can be set as The hexagonal pyramid type can also fill the active light-emitting layer 5, and the material of the hole injection layer 63 can be Mg-doped GaN layer or InxGa1-xN (0<x ≤ 1) or P-GaN / U-GaN periodic structure .

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Abstract

Disclosed is an LED epitaxial structure. The LED epitaxial structure comprises a substrate, a first conductive type semiconductor layer, a superlattice layer with V-shaped pits, a hole barrier layer, an active region light emitting layer and a second conductive type semiconductor layer from the bottom up in sequence, wherein the hole barrier layer covers the V-shaped pits; and ratio of the thickness of the hole barrier layer in an a direction perpendicular to the side walls of the V-shaped pits to the thickness of the hole barrier layer in a vertical c direction is greater than 0.4.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial structure. Background technique [0002] Current LEDs mainly include N-type layers, GaN\InGaN multiple quantum wells, and P-type layers. Since the mobility of electrons is much greater than that of holes, it is customary to design electron blocking layers after MQW to reduce electron leakage, but in In the actual LED structure, there are a large number of V-type defects in the multi-quantum well layer, and a large number of holes will be injected into the MQW through the V-type defects, and leak through the MQW into the superlattice layer and the N-type layer, resulting in entering the MQW to participate in radiative luminescence. The number of holes decreases, and as the driving current increases, hole leakage intensifies, resulting in obvious hole leakage in some high-current LED products. [0003] Although the hole barrier layer disclosed in the existi...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/20H01L33/14
CPCH01L33/04H01L33/14H01L33/20
Inventor 刘建明张洁朱学亮陈秉扬张中英徐宸科
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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