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A low-power magnetic multi-resistance memory cell

A storage unit, multi-resistance technology, applied in the field of non-volatile storage and logic, can solve the problems of circuit design difficulty, control complexity, chip area manufacturing process and cost, etc., to improve circuit integration, reduce complexity and Effects on manufacturing cost, ease of optimization and design

Active Publication Date: 2018-12-04
致真存储(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the difficulties in circuit design, control complexity, chip area, manufacturing process and cost faced by the magnetic tunnel junction writing technology mentioned in the above background, the present invention proposes a low-power magnetic multi-resistance memory unit

Method used

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  • A low-power magnetic multi-resistance memory cell
  • A low-power magnetic multi-resistance memory cell
  • A low-power magnetic multi-resistance memory cell

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Embodiment Construction

[0072] The substantive features of the present invention are further described with reference to the accompanying drawings. The drawings are all schematic diagrams, and the thicknesses of the various functional layers or regions involved are not actual dimensions, and the resistance and current values ​​in the working mode are also not actual values.

[0073] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is to be construed as being limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0074] The invention provides a low-power consumption magnetic multi-resistance storage unit, which can be used not only for constructing a magnetic random access memo...

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Abstract

A low-power consumption magnetic multi-resistance memory unit of the present invention comprises an antiferromagnetic strip film with a thickness of 0-20nm from bottom to top, a first ferromagnetic metal with a thickness of 0-3nm, and a first ferromagnetic metal with a thickness of 0-2nm. The first oxide, the second ferromagnetic metal with a thickness of 0-3nm, the first synthetic antiferromagnetic layer with a thickness of 0-20nm and the first electrode with a thickness of 10-200nm; the two ends of the antiferromagnetic strip film are respectively Plated with a second electrode and a third electrode; the five layers of material above the antiferromagnetic strip film form a magnetic tunnel junction. The invention can realize multi-resistance state storage, and its application is no longer limited to the fields of single-bit storage and logical operation, but can be extended to the fields of brain-inspired computing and other fields; data is written by using unidirectional current, which simplifies the design of memory and logic circuits, and improves circuit integration The degree of power consumption of the storage unit is reduced, which is conducive to reducing the complexity of the process and the manufacturing cost; using different branches to write data facilitates independent optimization and design of the write operation of different data.

Description

【Technical field】 [0001] The invention relates to a low-power consumption magnetic multi-resistance storage unit, which belongs to the technical field of non-volatile storage and logic. 【Background technique】 [0002] Emerging non-volatile memory technology can keep stored data from being lost when power is turned off, so it is expected to solve the increasingly severe static problems faced by traditional memory and logic circuits based on complementary metal-oxide semiconductor (Complementary metal-oxide semiconductor, CMOS) technology. power consumption problem. Among them, Magnetic Random Access Memory (MRAM) based on Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) has been proved to be the The most potential general-purpose memory. It is not only expected to replace traditional SRAM (Static random access memory, SRAM) and dynamic random access memory (Dynamic random access memory, DRAM), but also can be applied to the design of non-volatile logic circuits. At...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/08G11C11/56H10N50/10
CPCG11C11/5607G11C11/5657G11C11/5685H10N50/10H10N50/85
Inventor 赵巍胜王昭昊林晓阳粟傈张磊
Owner 致真存储(北京)科技有限公司
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