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Over-mold plastic packaged wide band-gap power transistors and mmics

A technology of overmolding and transistors, which is applied to the parts of amplification devices, electric solid-state devices, semiconductor devices, etc., which can solve the problems of expensive manufacturing and increased electronic packaging costs

Active Publication Date: 2017-05-10
沃孚半导体公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the ceramic body 14 and metal substrate 20 of the conventional package 10 are even suitable for protecting and dissipating heat generated therefrom from wide bandgap semiconductor devices, they are expensive to manufacture, thereby increasing the cost of electronic packages including wide bandgap semiconductor devices

Method used

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  • Over-mold plastic packaged wide band-gap power transistors and mmics
  • Over-mold plastic packaged wide band-gap power transistors and mmics
  • Over-mold plastic packaged wide band-gap power transistors and mmics

Examples

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Embodiment Construction

[0019] The embodiments set forth below represent necessary information to enable those skilled in the art to practice the embodiments, and illustrate the best mode for practicing the embodiments. When reading the following description according to the accompanying drawings, those skilled in the art will understand the concepts of the present disclosure, and will realize that there is no particular application of these concepts involved here. It should be understood that these concepts and applications fall within the scope of the disclosure and appended claims.

[0020] It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish elements from each other. For example, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element without departing from the s...

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PUM

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Abstract

A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.

Description

Technical field [0001] The present disclosure relates to wide band gap semiconductor devices. Specifically, the present disclosure relates to a wide band gap power transistor in an overmolded package. Background technique [0002] As wireless communication standards continue to evolve to provide improvements in data rates and reliability, radio frequency (RF) power amplifiers (PA) used to transmit wireless signals have increasingly strict requirements. RF PAs complying with the latest wireless communication standards must provide high linearity and large gains in a wide bandwidth range, and at the same time should be highly efficient in order to maintain the battery life of the mobile terminal containing them. It is well known and widely used silicon (Si) and gallium arsenide (GaAs) RF PAs. However, these RF PAs have relatively narrow bandwidth and limited output power, which are caused by the narrow band gap of their corresponding material systems. Inherent characteristics. I...

Claims

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Application Information

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IPC IPC(8): H01L23/433H01L23/495H01L23/66
CPCH01L23/4334H01L23/49562H01L23/66H01L2924/181H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2223/6655H03F1/565H03F3/195H03F3/211H03F2200/222H03F2200/225H03F2200/387H03F2200/391H03F2200/451H01L23/3107H01L2924/00014H01L2924/00012H01L23/293H01L2924/00
Inventor S·伍德J·W·米莉根C·荷曼森
Owner 沃孚半导体公司
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