Insulated gate bipolar transistor and construction method thereof

Abstract

The invention discloses an insulated gate bipolar transistor construction method. The method comprises the steps of constructing a P type diffusion area on a substrate by using P type diffusion process such that the junction depth of the P type diffusion process is larger than or equal to the depth of the trench of a transistor, a step of making a trench gate structure, a step of making an N+ source electrode area, a step of etching an emitter metal contact window, a step of allowing the P type diffusion area with a specific depth to be inverted by using high energy ions and thus constructing an N well layer in the P type diffusion area, wherein the P type diffusion area is divided by the N well layer to be upper and lower mutually isolated parts, the upper part is a P- base area, and the lower part is a P well layer, and a step of implementing a follow-up process to complete the construction of the transistor. Compared with the prior art, the method of the invention has the advantages that the technological process is greatly simplified, and thus the overall process cost and the process difficulty are reduced. At the same time, each step of the invention can be completed by adopting the prior art, and the adding of new process equipment is not needed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an insulated gate bipolar transistor and a construction method thereof. Background technique [0002] With the continuous development of semiconductor technology, the application of insulated gate bipolar transistor (IGBT) is more and more extensive. In the prior art, in order to optimize the on-state voltage drop and turn-off loss of the IGBT and reduce the power consumption of the device, a carrier storage layer (hole blocking layer) structure is generally used, also known as N-enhancement Layer and N-enhancement Layer. Carrier Storage N Layer). By setting an N well (carrier storage layer) under the P-base region to surround the P-base region, a hole barrier is formed there to block the holes from being extracted by the emitter electrode in the on-state, And increase the electron injection of the emitter, thereby enhancing the conductance modulation effect at this plac...

AI Technical Summary

Problems solved by technology

[0003] Generally, the introduction of the "well" structure makes the manufacturing process of the device complicated, requiring multiple doping processes

In addition, the collaborative optimization of multiple doping is very difficult, and the overall process cost is significantly increased

Images