Chip of light emitting diode and production method of chip
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as open circuits and local holes in electrode lines, so as to improve reliability and ensure normal access.
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Embodiment 1
[0031] An embodiment of the present invention provides a light emitting diode chip, see figure 1 , the chip includes a sapphire substrate 1, and an N-type GaN layer 2, a light-emitting layer 3, a P-type GaN layer 4, and a transparent conductive film 5 sequentially stacked on the sapphire substrate 1, and the P-type GaN layer 4 has a layer extending to The groove of the N-type GaN layer 2, the N-type pad 6 is arranged on the N-type GaN layer 2, the P-type pad 7 is arranged on the P-type GaN layer 4, the P-type electrode line 8 is arranged on the transparent conductive film 5 and Extending outward from the P-type pad 7 , a passivation layer 9 is provided on the P-type electrode line 8 , the transparent conductive film 5 , the sidewall of the groove and the N-type GaN layer 2 .
[0032] In this embodiment, both the N-type pad 6 and the P-type pad 7 are composed of the first material layer 10, and the P-type electrode line 8 is composed of the first material layer 10 and the secon...
Embodiment 2
[0040] The embodiment of the present invention provides a method for manufacturing a chip of a light emitting diode, see figure 2 , the production method includes:
[0041] Step 201: sequentially forming an N-type GaN layer, a light-emitting layer, and a P-type GaN layer on a sapphire substrate.
[0042] Step 202: Opening a groove extending to the N-type GaN layer on the P-type GaN layer.
[0043] Figure 3a It is a schematic structural diagram of the LED chip after step 202 is executed. Wherein, 1 is a sapphire substrate, 2 is an N-type GaN layer, 3 is a light-emitting layer, and 4 is a P-type GaN layer.
[0044] Step 203: forming a transparent conductive layer on the P-type GaN layer.
[0045] Figure 3b It is a schematic structural diagram of the LED chip after step 203 is executed. Wherein, 1 is a sapphire substrate, 2 is an N-type GaN layer, 3 is a light-emitting layer, 4 is a P-type GaN layer, and 5 is a transparent conductive layer.
[0046] Optionally, the mate...
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Abstract
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