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Chip of light emitting diode and production method of chip

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as open circuits and local holes in electrode lines, so as to improve reliability and ensure normal access.

Active Publication Date: 2017-05-17
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional LED chips generally use Al as the electrode material, which is suitable for most situations. However, under high current, the electrostatic electric field drives the electrons to move at high speed, and violently collides with Al atoms, resulting in a void in a local area of ​​the electrode line and an open circuit. electromigration

Method used

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  • Chip of light emitting diode and production method of chip
  • Chip of light emitting diode and production method of chip
  • Chip of light emitting diode and production method of chip

Examples

Experimental program
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Embodiment 1

[0031] An embodiment of the present invention provides a light emitting diode chip, see figure 1 , the chip includes a sapphire substrate 1, and an N-type GaN layer 2, a light-emitting layer 3, a P-type GaN layer 4, and a transparent conductive film 5 sequentially stacked on the sapphire substrate 1, and the P-type GaN layer 4 has a layer extending to The groove of the N-type GaN layer 2, the N-type pad 6 is arranged on the N-type GaN layer 2, the P-type pad 7 is arranged on the P-type GaN layer 4, the P-type electrode line 8 is arranged on the transparent conductive film 5 and Extending outward from the P-type pad 7 , a passivation layer 9 is provided on the P-type electrode line 8 , the transparent conductive film 5 , the sidewall of the groove and the N-type GaN layer 2 .

[0032] In this embodiment, both the N-type pad 6 and the P-type pad 7 are composed of the first material layer 10, and the P-type electrode line 8 is composed of the first material layer 10 and the secon...

Embodiment 2

[0040] The embodiment of the present invention provides a method for manufacturing a chip of a light emitting diode, see figure 2 , the production method includes:

[0041] Step 201: sequentially forming an N-type GaN layer, a light-emitting layer, and a P-type GaN layer on a sapphire substrate.

[0042] Step 202: Opening a groove extending to the N-type GaN layer on the P-type GaN layer.

[0043] Figure 3a It is a schematic structural diagram of the LED chip after step 202 is executed. Wherein, 1 is a sapphire substrate, 2 is an N-type GaN layer, 3 is a light-emitting layer, and 4 is a P-type GaN layer.

[0044] Step 203: forming a transparent conductive layer on the P-type GaN layer.

[0045] Figure 3b It is a schematic structural diagram of the LED chip after step 203 is executed. Wherein, 1 is a sapphire substrate, 2 is an N-type GaN layer, 3 is a light-emitting layer, 4 is a P-type GaN layer, and 5 is a transparent conductive layer.

[0046] Optionally, the mate...

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Abstract

The invention discloses a chip of a light emitting diode and a production method of the chip and belongs to the technical field of semiconductors. The chip comprises a sapphire substrate, an N-type GaN layer, a luminous layer, a P-type GaN layer and a transparent conducting thin film, wherein the N-type GaN layer, the luminous layer, the P-type GaN layer and the transparent conducting thin film are sequentially overlapped on the sapphire substrate; an N-type welding plate is arranged on the N-type GaN layer, a P-type welding plate is arranged on the P-type GaN layer, a P-type electrode wire is arranged on the transparent conducting thin film and extends outwards from the P-type welding plate, each of the P-type electrode wire, the transparent conducting thin film and the N-type GaN layer is provided with a passivation layer thereon, each of the N-type welding plate and the P-type welding plate is composed of a first material layer, the P-type electrode wire is composed of the first material layer and a second material layer, the first material layer comprises one or multiple of a Cr layer, an Al layer, a Ti layer, an Au layer, a Pt layer and an Ni layer, and the second material layer is a superlattice layer or TiW layer form by alternating laminating of an NiPt layer, the Ni layer and the Pt layer. By the arrangement, electro migration of the Al layer can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chip of a light emitting diode and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED for short) is a semiconductor light emitting device, which is widely used in fields such as indicator lights and display screens. White light LED is the third generation of electric light source after incandescent lamps and fluorescent lamps. Its energy consumption is only one-eighth of that of incandescent lamps and one-half of that of fluorescent lamps. Its lifespan is as long as 100,000 hours. . [0003] Traditional LED chips generally use Al as the electrode material, which is suitable for most situations. However, under high current, the electrostatic electric field drives the electrons to move at high speed, and violently collides with Al atoms, resulting in a void in a local area of ​​the electrode line and an open cir...

Claims

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Application Information

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IPC IPC(8): H01L33/36H01L33/40H01L33/00
CPCH01L33/0075H01L33/36H01L33/40H01L2933/0016
Inventor 尹灵峰王江波
Owner HC SEMITEK ZHEJIANG CO LTD