Unlock instant, AI-driven research and patent intelligence for your innovation.

Indole quinoxaline oganic light emitting diode material

A technology of light-emitting diodes and light-emitting materials, which is applied in the direction of organic light-emitting devices, organic light-emitting device structures, materials for organic semiconductor devices, etc., and can solve problems such as difficult film formation and poor solubility

Active Publication Date: 2017-05-17
GUANMAT OPTOELECTRONICS MATERIALS INC
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Recently, the literature (Appl.Phys.Lett., 2007, 90, 183503, etc.) reported hole transport materials composed of biphenyl and aromatic amines, but the solubility was poor and film formation was difficult.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Indole quinoxaline oganic light emitting diode material
  • Indole quinoxaline oganic light emitting diode material
  • Indole quinoxaline oganic light emitting diode material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] Example 1: Synthetic preparation of compounds.

[0088] According to chemical reaction formulas 6 and 7, intermediate compounds A6-1 and B6-1 were prepared respectively, and finally compound 2-1 was prepared in reaction formula 8 with 82% yield.

[0089]

[0090]

[0091]

[0092] Similarly, based on the above principles of synthetic chemistry, without departing from the scope of the present invention, the following main material compounds were synthesized. The specific listed compounds have molecular weights and molecular fragments verified by mass spectrometry, as shown in Table 3 below.

[0093] Table 3: Compound synthesis and characterization:

[0094]

[0095]

[0096]

[0097]

[0098]

[0099]

[0100]

[0101]

[0102]

[0103]

[0104] .

Embodiment 2

[0105] Embodiment 2 Device application example.

[0106] In a background vacuum up to 10 -5 Pa's multi-source evaporation OLED preparation equipment adopts the following device structure: ITO / mTDATA (100 Å) / NPD (400 Å) / Host: 5% luminescent dopant 10% (300 Å ) / TPBi (300 Å) / LiF (10Å) / Al, using different Host OLED light-emitting devices for comparison. Wherein the vacuum deposition speed of each organic layer and electrode is listed in Table 4 at time.

[0107] Compare the main material:

[0108] .

[0109] Table 4: Preparation conditions of OLED devices (doping wt concentration in the light-emitting layer is 9%).

[0110]

[0111] For cross-linkable host materials, use host material and luminescent dopant solution, such as 15% (weight) xylene solution, use spin coating and then heat in a nitrogen glove box to evaporate the solvent and complete cross-linking into an insoluble and infusible luminescent layer film.

[0112] All manufactured OLED devices are tested and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An oganic light emitting diode is characterized in that the oganic light emitting diode is formed by one cathode, one anode and an organic semiconductor layer between the cathode and the anode; the organic semiconductor layer includes an organic luminescent layer, an organic semiconductor compound is contained and a general formula is defined in the description; and indole quinoxaline is connected to an aromatic hybrid fusion ring. Charge balance injection and luminescence stability can be improved, and high-stability, high-efficiency and long-service-life luminescence performance is acquired.

Description

technical field [0001] The invention relates to the application of organic semiconductors in organic light-emitting devices, especially an organic semiconductor material that balances charge injection and transport, which can be used as a host material in organic light-emitting devices to improve device performance. Background technique [0002] Organic semiconductor materials are new types of optoelectronic materials, and their large-scale research originated in 1977 when Hideki Shirakawa, A. Heeger and A. McDiamid jointly discovered doped polyacetylene with conductivity up to copper level. Subsequently, in 1987, C. Tang of KodaK Company invented the organic small molecule light-emitting diode (OLED), and in 1990, R. Friend and A.Holmes of Cambridge University invented the polymer light-emitting diode P-OLED, and in 1998, S. Forrest and M. Thomson invented a more efficient organic phosphorescent light-emitting diode PHOLED. Because organic semiconductor materials have a st...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/655H10K85/654H10K85/657H10K85/6572H10K50/00H10K50/11H10K2102/00H10K2102/302
Inventor 李晓常
Owner GUANMAT OPTOELECTRONICS MATERIALS INC