Manufacturing method and manufacturing system for silicon single crystal

Abstract

[Problem] To estimate in advance an initial liquid surface level of a silicon melt in a silica glass crucible by accurately ascertaining the volume of the individual silica glass crucible so as to securely perform a seed-crystal liquid contact step. [Solution] In the present invention, before a silica glass crucible is filled with raw material, the spatial coordinates of numerous points on the inner surface of the silica glass crucible are measured and the three-dimensional shape of the inner surface of the silica glass crucible is identified by combining polygons with the measured points as apex coordinates (S11), an estimated value of the initial liquid surface level of silicon melt in the silica glass crucible is set (S12), a volume of silicon melt that meets the estimated value of the initial liquid surface level is determined on the basis of the three-dimensional shape of the inner surface of the silica glass crucible (S13), the weight of the silicon melt with that volume is determined (S14), raw material with that weight is loaded into the silica glass crucible (S15), and liquid contact with a seed crystal is controlled on the basis of the estimated value of the initial liquid surface level (S17).

Description

technical field [0001] The present invention relates to a silicon single crystal manufacturing method and a silicon single crystal manufacturing system, and more particularly to a method of filling a vitreous silica crucible with raw materials used when pulling a single crystal silicon by the Czochralski method. Background technique [0002] The Czochralski method (CZ method) is known as a method for growing silicon single crystals. In the CZ method, a silicon raw material is melted in a vitreous silica crucible, a seed crystal is immersed in the obtained silicon melt, and a single crystal is grown by slowly pulling the seed crystal while rotating the crucible. In order to increase the production yield of single crystals, it is necessary to obtain as large an ingot as possible in one pulling step, and it is therefore necessary to initially fill a crucible with as much raw material as possible. For example, a crucible with a diameter of 32 inches (about 810 mm) can be filled...

AI Technical Summary

Problems solved by technology

This used crucible has major problems such as crucible cracks during single crystal pulling, single crystal contamination by impurities, and increase in crystal defects.

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