Anti-reflux dual-power-supply driving circuit applicable to SiC BJT (Bipolar Junction Transistor) and control method thereof

Abstract

The invention discloses an anti-reflux dual-power-supply driving circuit applicable to a SiC BJT (Bipolar Junction Transistor) and a control method thereof, and belongs to the technical field of power electronic circuits. The driving circuit comprises a high-voltage quick switching branch and a low-voltage driving circuit. The control method of the driving circuit comprises the steps that a high-voltage power supply is adopted to supply power when the transistor is conducted so as to provide relatively high pulse current and accelerate the conduction process; a low-voltage power supply is adopted to supply power when the transistor is steadily conducted so as to provide small driving current; and a low-voltage power supply branch is kept to be open when the transistor is turned off, and the high-voltage quick switching branch is adopted to discharge. The driving circuit disclosed by the invention can eliminate a reflux phenomenon at a turn-off moment, the driving loss is reduced, and advantages of the dual-power-supply driving circuit are given into full play.

Description

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AI Technical Summary

Benefits of technology

This technology improves upon existing circuits by combining two different types of components - either an open or closed type with both voltage levels needed for optimal performance. It also includes a faster way to start up without generating too much heat during operation compared to traditional methods like pulsing mode converters (PWM).

Problems solved by technology

This patents describes different technical solutions related to improving the speed and efficiency of electronic components used in semiconductor technology. These include reducing resistance losses during operation while still providing sufficient driving capabilities without increasing their size and complexity. Current designs use separate power supplies and driver circuits, leading to increased energy consumption and reduced reliability. To address these issues, new proposals involve integrally forming multiple layers of material called double insulation film sandwiched between conductive elements like metal borosilicone compound crystal and carbon nanotubbles. By combining them together, they can improve upon certain aspects including lower operating voltages, higher operational speeds, improved thermal characteristics, reduction of ON/OFF currents, better linearity, lesser noise levels, etc., resulting in faster response times and more efficient overall functioning of the system.

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