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A millimeter-wave monolithic integrated transmission power distribution circuit

A single-chip integration and transmission power technology, applied in the field of circuits, can solve the problems of large millimeter-wave chips, increased parasitic effects, multi-chip area, etc., to achieve compact layout, reduce parasitic loss, and occupy a small chip area Effect

Active Publication Date: 2022-06-17
麦堆微电子技术(上海)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing millimeter-wave transmission power distribution circuits all use multiple sets of one-to-two power dividers to achieve three-way power distribution, which requires a large chip area and increases parasitic effects, making the millimeter-wave chip larger. , the power consumption is also relatively high

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  • A millimeter-wave monolithic integrated transmission power distribution circuit

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Embodiment Construction

[0010] The embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings, but the present embodiments are not intended to limit the present invention. Any similar structures and similar changes of the present invention shall be included in the protection scope of the present invention. The commas in all indicate the relationship of and.

[0011] like figure 1 As shown, a millimeter-wave monolithic integrated transmit power distribution circuit provided by an embodiment of the present invention is characterized in that it includes a one-to-three-way power divider, a first-stage drive amplifier, a second-stage drive amplifier, a power amplifier, a frequency divider, and a polyphase filter for generating four quadrature differential signals;

[0012] The source signal input end of the one-to-three-way power divider is connected to the output end of the first-stage drive amplifier, and the first-way output end of the ...

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Abstract

A millimeter-wave single-chip integrated transmission power distribution circuit relates to the field of circuit technology and solves the technical problems of reducing occupied area, parasitic effects and power consumption. The circuit includes a three-way power divider, a first-stage drive amplifier, a second-stage drive amplifier, a power amplifier, a frequency divider, and a polyphase filter for generating four-way quadrature differential signals; the one-point The source signal input terminal of the three-way power splitter is connected to the output end of the first-stage drive amplifier, and the first output end of the one-point three-way power divider is connected to the input end of the polyphase filter through the second-stage drive amplifier. The second output terminal of the three-way power divider is connected to the input terminal of the power amplifier, and the third output terminal of the three-way power divider is connected to the source signal input terminal of the frequency divider. The circuit provided by the invention reduces the parasitic effect, occupies a small chip area, and has low power consumption.

Description

technical field [0001] The invention relates to circuit technology, in particular to a technology of a millimeter-wave monolithic integrated transmission power distribution circuit. Background technique [0002] Due to the high available bandwidth and high detection accuracy of the millimeter-wave frequency band, millimeter-wave chips are widely used in wireless communication, radar, guidance, remote sensing technology, radio astronomy, and electronic countermeasures. In recent years, with the successive opening of millimeter-wave frequency bands, millimeter-wave chips have become a hot spot. Among them, the millimeter-wave RF front-end, as a key technology, largely determines the performance, cost, and size of the system. [0003] In recent years, with the increasing market demand for millimeter-wave chips, the requirements for their cost, integration, and power consumption have increased. The advancement of integrated circuit technology, especially CMOS technology, makes...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04B1/04
CPCH04B1/04H04B2001/0408
Inventor 田彤丁博文赵辰袁圣越沈叶东
Owner 麦堆微电子技术(上海)有限公司
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