A kind of solar cell and preparation method thereof

A technology for solar cells and solar cell sheets, applied in the field of solar cells, can solve problems such as generation of carriers, limited action, parasitic loss, etc., and achieve the effects of low cost, simple manufacturing process, and increased thickness

Active Publication Date: 2022-04-12
ZHONGSHAN DEHUA CHIP TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although the specular reflection layer made of metal can improve the photoelectric conversion efficiency of flexible GaAs solar cells to a certain extent, it will generate carrier recombination centers at the interface with the battery contact layer, which will cause parasitic losses.
Therefore, the effect of the specular reflection layer on the improvement of the photoelectric conversion efficiency of flexible GaAs solar cells is limited.

Method used

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  • A kind of solar cell and preparation method thereof
  • A kind of solar cell and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0084] In this embodiment, a solar cell is prepared, and the specific process is as follows:

[0085] S1. Epitaxially grow AlAs sacrificial layer, N-type GaAs contact layer, GaInP battery, first tunnel junction, GaAs battery layer, second tunnel junction, lattice buffer layer, GaInAs battery and P-type GaInAs contact layer on GaAs substrate in sequence ;

[0086] S2. On the surface of the P-type GaInAs contact layer, use photolithography to make a trench pattern in the shape of an isosceles triangle with a base angle of 15°, and protect the area outside the trench pattern; then dry-etch the P-type GaInAs Contact layer, get groove, clean and remove photoresist;

[0087] S3. Photolithographic protection of the surface of the component obtained in step S2, the area outside the groove, the material in the area where the groove is located is silicon dioxide, the thickness is 150nm back insulating layer, the setting method is evaporation, and then the photoresist is removed by clea...

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Abstract

The invention discloses a solar cell and a preparation method thereof, belonging to the technical field of solar cells. A solar cell, comprising sequentially stacked battery bodies; a P-type contact layer, the surface of the P-type contact layer away from the battery body is provided with a groove; a back insulating layer, the back insulating layer is arranged in the groove; the back metal layer, the back metal layer is provided with teeth matching the groove. The solar cell of the present invention reduces the parasitic loss on the contact interface between the P-type contact layer and the back metal layer due to the partially covered back insulating layer being set between the P-type contact layer and the back metal layer; And the non-planar structure of the back metal layer improves the optical path length of light in the absorbing layer, thereby improving the photoelectric conversion efficiency of the cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a solar cell and a preparation method thereof. Background technique [0002] Gallium arsenide is a semiconductor material with a wide band gap. Compared with silicon solar cells, solar cells based on gallium arsenide have better spectral responsivity and space solar spectrum matching ability, and are resistant to high temperature. Compared with rigid GaAs solar cells, flexible GaAs solar cells have the advantages of high conversion efficiency, flexibility, light weight and high power-to-weight ratio. Therefore, flexible gallium arsenide solar cells can be used in the fields of automobiles, high-altitude and long-endurance drones, consumer electronics, the Internet of Things, wearable devices, and space vehicles. [0003] In order to further improve the photoelectric conversion efficiency of flexible gallium arsenide solar cells, researchers usually deposit a thi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0236H01L31/18
CPCH01L31/02168H01L31/02167H01L31/02366H01L31/184Y02P70/50Y02E10/544
Inventor 何键华杨文奕杜伟王硕
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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