Porous SiCO-based nitric oxide sensor

A nitric oxide and sensor technology, applied in the field of sensors, can solve the problems that the detection process is easily interfered by other gases, high working temperature, and high preparation cost, and achieve improved gas sensing performance and interface bonding strength, low temperature components, and high sensitivity. Effect

Active Publication Date: 2017-06-06
WENZHOU UNIVERSITY
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AI Technical Summary

Problems solved by technology

The detection of NO gas not only requires rapid and accurate transmission of the obtained information in the form of electrical signals, but also requires the detection system to be small in size and light in weight. Traditional atmosphere detection methods are no longer competent.
At present, the mainstream metal oxide-based NO sensors generally require a higher operating temperature, and their detection process is also easily interfered by other gases.
However, the carbon nanotube-based NO sensor with better effect also has the problems of high preparation cost and poor reliability.

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  • Porous SiCO-based nitric oxide sensor
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Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

[0025] Example. A porous SiCO-based nitric oxide sensor constituted as figure 1 As shown, it includes a single crystal silicon substrate 1, and the single crystal silicon substrate 1 is sequentially provided with SiO 2 The thin film layer 2, the SiBCO thin film layer 3 and the SiCO thin film layer 4, the SiCO thin film layer 4 is provided with an electrode 6 through the SiAlCO thin film layer 5. The SiO 2 Thicknesses of the thin film layer 2 and the SiBCO thin film layer 3 are both 95-105 nm (100 nm). The thickness of the SiAlCO thin film layer 5 is 95-105 nm (100 nm). The SiCO thin film layer 4 has a thickness of 800 nm.

[0026] Porous SiCO-based nitric oxide sensor, the preparation method is carried out according to the following steps:

[0027] ①Use acetone to ultrasonically clean the mono...

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Abstract

The invention discloses a porous SiCO-based nitric oxide sensor which comprises a monocrystalline silicon substrate, wherein a SiO2 thin film layer, a SiBCO thin film layer and a SiCO thin film layer are sequentially arranged on the monocrystalline silicon substrate, and an electrode is arranged on the SiCO thin film layer through a SiAlCO thin film layer. According to the porous SiCO-based nitric oxide sensor, a multilayer gas-sensitive thin film system with excellent mechanical reliability is disclosed through gradient design of gas sensitive characteristic and mechanical property; utilizing a magnetron sputtering method to prepare the thin film system has the advantages of good adhesiveness, low cost, controllable components, low temperature and the like; preparing a SiCO surface porous structure through a chemical corrosion method has the advantages of simple and convenient process, rich and cheap raw materials, controllable nano-topography and the like.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a porous SiCO-based nitric oxide sensor. Background technique [0002] On the one hand, nitric oxide (NO) gas is a harmful gas, which is one of the main pollutants of automobile exhaust and atmospheric environment; Early warning of the onset of asthma and other lung diseases. However, the current NO breathing gas testing instruments are too bulky and expensive, and most of them are concentrated in large medical institutions, so they cannot be widely used. Therefore, the development of highly sensitive NO sensors is of great significance to the fields of environmental engineering and medicine. The detection of NO gas not only requires rapidity and accuracy, and the information obtained is transmitted in the form of electrical signals, but also requires the detection system to be small in size and light in weight. The traditional atmosphere detection method is no longer competent. At pres...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/30
CPCG01N27/307G01N27/308
Inventor 廖宁波郭志张淼
Owner WENZHOU UNIVERSITY
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