Spintronic device with phase change material as tunneling layer

A technology of spintronic devices and phase change materials, which is applied in the field of spintronics to achieve the effect of improving performance

Active Publication Date: 2017-06-09
BEIHANG UNIV
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  • Description
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[0010] 2. After the device is completed, the parameters of the

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  • Spintronic device with phase change material as tunneling layer
  • Spintronic device with phase change material as tunneling layer
  • Spintronic device with phase change material as tunneling layer

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Embodiment Construction

[0055] The invention proposes a tunneling layer whose resistance can be regulated by phase change. In the specific example of the nonlocal spin injection structure, the spin injection efficiency is improved by adjusting the resistance of the tunneling layer; in the specific example of the magnetic tunnel junction, the tunneling magnetoresistance is improved by adjusting the resistance of the tunneling layer.

[0056] The substantive features of the present invention are further described with reference to the accompanying drawings. The attached drawings are all schematic diagrams, and the thicknesses of the functional layers or areas involved are not actual dimensions, the distances between functional areas are not actual values, and the current and voltage values ​​in the working mode are also not actual values.

[0057] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplar...

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Abstract

The invention relates to a spintronic device with a phase change material as a tunning layer, and particularly to a non-local spin injection device. The lowest end is a spin channel. Two ends of outside part above the spin channel are respectively provided with a common metal electrode which is deposited. Two tunneling layers are deposited at the middle part above the spin channel. Furthermore a ferromagnetic metal electrode is deposited on the tunneling layer. The spintronic device is characterized in that the tunneling layers are made of a material which can generate phase change through driving by temperature and illumination; and the device further comprises a temperature control module or an illumination control module. According to the phase change tunneling layer (such as vanadium dioxide), the resistance can be controlled by means of temperature and illumination. The tunneling resistance can be artificially regulated in an appropriate interval, thereby improving performance of the spintronic device.

Description

[0001] 【Technical field】 [0002] The invention relates to a spintronic device using a phase change material as a tunneling layer. The phase change of the tunneling layer material is used to control the resistance of the tunneling layer, thereby regulating the tunneling probability of the spin current, and finally realizing the control of the spintronic device. Performance regulation. The invention belongs to the field of spin electronics. [0003] 【Background technique】 [0004] Spintronics mainly studies the characteristics of the spin degree of freedom of electrons and its manipulation methods, and realizes a new generation of electronic devices by generating, regulating, transporting and detecting spin currents. After years of development, spintronic devices have attracted widespread interest from the scientific and industrial communities, and have important applications in many fields. [0005] Spintronic devices often contain high-resistance tunneling layers. The role ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/257
Inventor 林晓阳郭思德赵巍胜张有光
Owner BEIHANG UNIV
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