Unlock instant, AI-driven research and patent intelligence for your innovation.

A Spintronic Device Using Phase Change Material as Tunneling Layer

A technology of spintronic devices and phase change materials, which is applied in the field of spintronics to achieve the effect of improving performance

Active Publication Date: 2019-01-29
BEIHANG UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 2. After the device is completed, the parameters of the tunneling layer are fixed and cannot be adjusted when necessary

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Spintronic Device Using Phase Change Material as Tunneling Layer
  • A Spintronic Device Using Phase Change Material as Tunneling Layer
  • A Spintronic Device Using Phase Change Material as Tunneling Layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The invention proposes a tunneling layer whose resistance can be regulated by phase change. In the specific example of the nonlocal spin injection structure, the spin injection efficiency is improved by adjusting the resistance of the tunneling layer; in the specific example of the magnetic tunnel junction, the tunneling magnetoresistance is improved by adjusting the resistance of the tunneling layer.

[0051] The substantive features of the present invention are further described with reference to the accompanying drawings. The attached drawings are all schematic diagrams, and the thicknesses of the functional layers or areas involved are not actual dimensions, the distances between functional areas are not actual values, and the current and voltage values ​​in the working mode are also not actual values.

[0052] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a spin electronic device using a phase change material as a tunneling layer, specifically a nonlocal spin injection device, the bottom end of which is a spin channel, and two outer sides above the spin channel A common metal electrode is deposited on each end, two tunneling layers are deposited in the middle above the spin channel, and a ferromagnetic metal electrode is deposited on each of the tunneling layers; it is characterized in that: the tunneling layer is capable of temperature and A material that undergoes a phase change driven by light; and the device further includes a temperature control module or a light control module. The phase-change tunneling layer (such as vanadium dioxide) proposed by the present invention can control resistance by temperature and light. The tunneling resistance can be artificially adjusted in a suitable range, thereby improving the performance of spintronic devices.

Description

【Technical field】 [0001] The invention relates to a spintronic device using a phase change material as a tunneling layer. The phase change of the tunneling layer material is used to control the resistance of the tunneling layer, thereby regulating the tunneling probability of the spin current, and finally realizing the control of the spintronic device. Performance regulation. The invention belongs to the field of spin electronics. 【Background technique】 [0002] Spintronics mainly studies the characteristics of the spin degree of freedom of electrons and its manipulation methods, and realizes a new generation of electronic devices by generating, regulating, transporting and detecting spin currents. After years of development, spintronic devices have attracted widespread interest from the scientific and industrial communities, and have important applications in many fields. [0003] Spintronic devices often contain high-resistance tunneling layers. The role of the tunnelin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/257
Inventor 林晓阳郭思德赵巍胜张有光
Owner BEIHANG UNIV