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LED device structure for wafer level package

A LED device and wafer-level packaging technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as side leakage of blue light, poor heat dissipation, and low light extraction efficiency, and achieve improved light transmittance, improved overall performance, and increased The effect of light extraction efficiency

Active Publication Date: 2017-06-13
SHANGHAI XINYUANJI SEMICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a wafer-level packaged LED device structure, which is used to solve the problems of blue light side leakage, poor heat dissipation, and low light extraction efficiency of the LED device structure in the prior art.

Method used

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  • LED device structure for wafer level package

Examples

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Embodiment 1

[0053] This embodiment provides a wafer-level packaged LED device structure, such as figure 1 As shown, the LED device structure at least includes the following structures: a phosphor substrate, a flip-chip light emitting diode 3 and a first reflector 4 .

[0054] The phosphor substrate includes a transparent substrate 1 and phosphor colloid 2 formed on the surface of the transparent substrate 1 .

[0055]The transparent substrate 1 is a material with high light transmittance, and its light transmittance to blue light (300nm-700nm) is above 95%. For example, it can be a glass substrate or the like. The thickness of the first transparent substrate 1 is in the range of 10-100 μm, for example, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 48 μm, 50 μm, 60 μm, 70 μm, 90 μm, 100 μm, etc. In this embodiment, the thickness of the transparent substrate 1 is preferably 70 μm.

[0056] The fluorescent powder colloid 2 can be formed on the transparent substrate 1 by coating or sintering process, ...

Embodiment 2

[0069] The difference between this embodiment and Embodiment 1 is that, in the LED device structure of wafer-level packaging provided by this embodiment, such as image 3 As shown, the phosphor substrate further includes an isolation substrate 5 formed on the surface of the phosphor colloid 2 . At this time, the phosphor substrate includes: a transparent substrate 1 , an isolation substrate 5 and a phosphor colloid 2 sandwiched between the transparent substrate 1 and the isolation substrate 5 .

[0070] As an example, the flip-chip light emitting diode 3 is bonded to the isolation substrate 5 of the phosphor substrate through a bonding layer 6 (such as silica gel or other resin colloid).

[0071] The transparent substrate with the phosphor colloid 2 is formed by coating or sintering the phosphor colloid 2 between two transparent substrates. The isolation substrate 5 is a material with high light transmittance, and its light transmittance to blue light (300nm-700nm) is above 9...

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Abstract

The invention provides an LED device structure for wafer level package. The LED device structure at least comprises a fluorescent powder substrate, an inverse-structure light emitting diode and a first reflection mirror, wherein the fluorescent powder substrate comprises a transparent substrate and fluorescent powder colloid, the fluorescent powder colloid is formed on the transparent substrate, the inverse-structure light emitting diode is formed on the fluorescent powder substrate, the first reflection mirror covers a surface of a side wall of the fluorescent powder colloid and a surface of a side wall of the inverse-structure light emitting diode, the fluorescent powder substrate also comprises an isolation substrate, and the isolation substrate is formed on a surface of the fluorescent powder colloid. A reflection mirror structure is arranged on a side wall of the device, the reflection mirror covers a side wall of a chip and the side wall of the fluorescent powder colloid, and light emitted from the chip is prevented from being leaked from the side wall of the chip; and by combining the reflection mirror on a surface of a P-type semiconductor conductive layer in the inverse-structure light emitting diode, emergent light of the chip completely irradiates out of a surface of an N-type semiconductor layer which is exposed and enters the fluorescent powder colloid in the transparent substrate, fluorescent powder is simulated, the simulation efficiency of the fluorescent powder is improved better, and the luminous efficiency of the device is improved.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a wafer-level packaged LED device structure. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. The light extraction efficiency of LED refers to the ratio of the available photons incident to the device and the photons generated by electron-hole recombination in the active area of ​​the epitaxial wafer. In traditional LED devices, due to factors such as substrate absorption, electrode blocking, and total reflection of the light-emitting surface, the light extraction efficiency is usually le...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/50H01L33/60H01L33/64
CPCH01L33/486H01L33/507H01L33/60H01L33/641
Inventor 郝茂盛张楠袁根如
Owner SHANGHAI XINYUANJI SEMICON TECH
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