A method of using a device for magnetron sputtering in a vacuum chamber

Abstract

The invention discloses a device for magnetron sputtering in a vacuum chamber. The device comprises a first rotatable large gear, a rotatable revolution supporting disk and a rotatable shielding disk which have superposed axes and are sequentially connected; multiple rotatable rotation sample wafer disks are evenly distributed on the revolution supporting disk in the circumferential direction; the axes of the rotation sample wafer disks are located on the circumference taking the axis of the revolution supporting disk as the center; each rotation sample wafer disk is provided with a rotation gear meshing with the first large gear; the shielding disk is located above the rotation sample wafer disks; at least one machining port is formed in the shielding disk and is formed above the circumference where the axes of the rotation sample wafer disks are located; and the area of each machining port is larger than that of each round sample wafer. With the device, multiple samples can be placed at a time, and multiple tests of different technological parameters can be made, so that the test efficiency can be greatly improved.

Description

technical field [0001] The invention relates to the technical field of vacuum magnetron sputtering, in particular to a device for magnetron sputtering in a vacuum chamber and an application method thereof. Background technique [0002] In the semiconductor and microelectronics industries, it is usually necessary to use vacuum plasma technology to sputter circular samples with circular magnetron targets, so as to carry out small batch production and verify various designs. The equipment currently on the market for the small batch production of circular samples usually uses a gear structure under the circular magnetron target in the vacuum chamber to set up multiple round tables that can rotate and revolve, so that the circular samples can be placed on the round table. Sputtering process is completed by rotating under each magnetron target. In practical application, before carrying out multi-chip production in one furnace, process exploration must be carried out. After many p...

AI Technical Summary

Problems solved by technology

The best uniformity can be obtained by rotation + revolution, but if the rotation + revolution mode is used when making a sample, the sample will rotate and move to other positions through revolution, and it will return to the specific magnetron target after a week. Sputtering wastes most of the sputtering time, which is very uneconomical. If the rotation + revolution mechanism is used as the sample transposition mechanism, the sample is just transposed to a certain sputtering target for fixed-point sputtering. During the sputtering process There is no rotation in the middle, and the uniformity will drop by 10%-20%, so the sputtering quality is difficult to guarantee

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