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Semiconductor devices and methods of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation

Active Publication Date: 2017-06-20
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are challenges in implementing such components and processes in complementary metal-oxide-semiconductor (CMOS) fabrication

Method used

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  • Semiconductor devices and methods of forming the same
  • Semiconductor devices and methods of forming the same
  • Semiconductor devices and methods of forming the same

Examples

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Embodiment Construction

[0011] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed in direct contact. An embodiment in which an additional part is formed so that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relations...

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Abstract

An embodiment is a semiconductor device, comprising: a substrate; a plurality of fin structures disposed on the substrate; a plurality of first strained materials disposed on each of the plurality of the fin structures; a plurality of cap layers individually formed on each of the plurality of first strained materials, wherein at least two cap layers are connected to each other; a second strained material disposed on the at least two cap layers which are connected to each other. The embodiment of the invention further provides a method for manufacturing the semiconductor device.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and more particularly, to semiconductor devices and methods for forming the same. Background technique [0002] In the pursuit of higher device density, higher performance, and lower cost, as the semiconductor industry has entered nanotechnology process nodes, challenges from manufacturing and design issues have led The development of 3D design. Similar to planar transistors, source and drain silicides can be formed on the source and drain regions of FinFETs. However, since the fins of FinFETs are usually narrow, current crowding can occur. Furthermore, it is difficult for the contact plugs to land on the source / drain portions of the fins. Therefore, an epitaxial semiconductor layer is formed on the fins using an epitaxial process to increase their volume. Typical FinFETs are fabricated with thin vertical "fins" (or fin structures) extending from the substrate, formed by, f...

Claims

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Application Information

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IPC IPC(8): H01L27/088H01L29/78H01L21/8234
CPCH01L21/823431H01L27/0886H01L29/7848H01L29/785H01L29/161H01L29/165H01L29/66795
Inventor 张智强宋学昌李昆穆游明华
Owner TAIWAN SEMICON MFG CO LTD