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P-type crystalline silicon bifacial battery structure and manufacturing method thereof

A double-sided battery and crystalline silicon technology, applied in the field of solar cells, can solve the problems of battery leakage and component packaging problems, which have not been well solved, and have not been applied on a large scale. good effect

Active Publication Date: 2018-07-24
LONGI SOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the leakage of MWT batteries and the packaging of components have not been well resolved, which makes MWT, as the core technology for improving the battery front, has not been applied on a large scale.

Method used

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  • P-type crystalline silicon bifacial battery structure and manufacturing method thereof
  • P-type crystalline silicon bifacial battery structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] (1) On the P-type single crystal silicon wafer, 5×5 through holes arranged equidistantly are formed by laser, and the diameter of a single through hole is 300um.

[0048] (2) Anisotropic etching of the P-type single crystal silicon wafer after making through holes in a KOH solution of about 80 crystals to obtain a surface pyramid structure.

[0049] (3) Use POCl at 800-900 3 The dopant is diffused under low pressure, and an N-type layer is formed on the front surface of the silicon wafer and the surface layer of the through-hole wall. The square resistance after doping is 70Ω / □.

[0050] (4) Using an inkjet method to print paraffin on the through hole and its surrounding area.

[0051] (5) Use wet etching to remove the phosphosilicate glass, back knot and paraffin on the front side of the silicon wafer.

[0052] (6) Annealing the etched silicon wafer in an annealing furnace at 650°C to grow a layer of dense thermal silicon oxide on the surface of the silicon wafer.

...

Embodiment 2

[0058] (1) On the P-type polysilicon wafer, 6×6 through holes arranged equidistantly are formed by laser, and the diameter of a single through hole is 200um.

[0059] (2) Put the P-type polysilicon wafer with through-holes in dry plasma texturing equipment to obtain multi-shaped micro-nano structures, and then perform surface modification in BOE solution.

[0060] (3) Use PH3 as an impurity, doping by ion implantation, and then annealing to form an N-type layer on the front side of the silicon wafer and the surface layer of the through-hole wall. The square resistance after doping is 80Ω / □.

[0061] (4) Using an inkjet method to print paraffin on the through hole and its surrounding area.

[0062] (5) Use wet etching to remove the phosphosilicate glass, back knot and paraffin on the front side of the silicon wafer.

[0063] (6) 20nm aluminum oxide and 60nm silicon nitride were successively deposited on the backside of the silicon wafer by PECVD method; 20nm silicon oxide and ...

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PUM

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Abstract

The invention provides a P-type crystalline silicon double-sided battery structure and a manufacturing method thereof. The battery structure sequentially comprises a front anti-reflection film, a front passivation film, an N-type doped layer, a P-type crystalline silicon substrate (4), a first back passivation film and a second back passivation film from the front to the back, and is characterized in that front negative electrode fine grid lines distributed at the front of the battery collect electrons and guide the electrons into back negative electrode main grid lines at the back of the battery through via hole electrodes penetrating through the battery piece; and back positive electrode fine grid lines and back positive electrode main grid lines at the back of the battery are distributed in a region beyond the via hole electrodes, and the back positive electrode main grid lines are intersected with the back positive electrode fine grid lines so as to guide holes collected at the back of the battery to the back positive electrode main grid lines.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a P-type crystalline silicon double-sided cell structure and a manufacturing method thereof. Background technique [0002] Due to the mature production process and low manufacturing cost, P-type crystalline silicon cells still occupy the vast majority of the market share at present and for a long period of time in the future. If P-type crystalline silicon solar cells want to continue to maintain their competitiveness and achieve greater development and application, the conversion efficiency must be further improved while reducing production costs. [0003] PERC technology focuses on the back of the battery, and uses passivation to greatly reduce the recombination speed on the back. In recent years, this technology has been gradually applied on a large scale in P-type crystalline silicon cells, increasing the efficiency of polycrystalline and monocrystalline cells ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/068H01L31/18
CPCH01L31/02167H01L31/022425H01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 赵科雄
Owner LONGI SOLAR TECH CO LTD