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Back electrode structure of P-type PERC double-side solar cell and cell

A technology for solar cells and back electrodes, which is applied in circuits, photovoltaic power generation, electrical components, etc., and can solve problems affecting the photoelectric conversion efficiency of cells

Inactive Publication Date: 2017-06-20
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The design of the back electrode pattern determines the current collection effect and light-receiving area of ​​the back passivation battery, thereby affecting the photoelectric conversion efficiency of the battery. Therefore, it is necessary to propose a new back electrode that can improve the conductivity of the electrode, reduce the shading area, and improve Photoelectric conversion efficiency of the battery

Method used

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  • Back electrode structure of P-type PERC double-side solar cell and cell
  • Back electrode structure of P-type PERC double-side solar cell and cell
  • Back electrode structure of P-type PERC double-side solar cell and cell

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0033] In recent years, with the in-depth research of scientists and technicians, a PERC solar cell with rear passivation has been discovered, which can further improve the photoelectric conversion efficiency of the cell. However, the aluminum oxide film and silicon nitride film on the back are insulating layers and cannot conduct electrons. Therefore, the conventional method is to open a groove on the silicon nitride under the gate line. When printing the gate line, the silver paste can be filled into the groove area. Form ohmic contact with P-type silicon to realize the conductive function.

[0034] Existing PERC single-sided solar cells have an all-aluminum back electric field covering the entire back of the silicon wafer on the back of the cell. The effect of ...

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Abstract

The invention discloses a back electrode structure. The back electrode structure comprises at least one back silver main grid and a plurality of aluminum grid lines, wherein the plurality of aluminum grid lines are parallel to one another, the aluminum grid lines are vertically connected with the back silver main grid, and an overlap connection region is formed between the aluminum grid lines and the back silver main grid and encircles the periphery of the back silver main grid, and in the overlap connection region, the aluminum grid lines cover the back silver main grid. Correspondingly, the invention also discloses a P-type PERC double-side solar cell employing the back electrode structure. With the adoption of the back electrode structure, the back electrode structure is simple in structure, relatively low in cost and good in conductivity, and the photoelectric conversion efficiency of the cell is high.

Description

technical field [0001] The present invention relates to the field of solar cells, in particular to a back electrode structure of a P-type PERC double-sided solar cell and a battery adopting the above back electrode structure. Background technique [0002] Solar cell power generation is the use of solar cells to directly convert sunlight energy into electrical energy. Because it is a green product, it will not cause environmental pollution, and it is a renewable resource. Therefore, in today's energy shortage situation, solar cells are an effective A new type of energy with broad development prospects. [0003] The production process of P-type PERC double-sided solar cells includes: texturing, diffusion, etching, rear passivation layer deposition, PECVD back coating, front PECVD coating, screen printing, sintering, and annealing. In the process of converting light energy into electrical energy in a solar cell, the photogenerated carriers generated inside need to be collected...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/04
CPCH01L31/022425H01L31/022433H01L31/068Y02E10/547
Inventor 方结彬何达能陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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