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Preparation method of p-type perc double-sided solar cell

A solar cell and double-sided technology, applied in the field of solar energy systems, can solve the problems of complex N-type double-sided cell technology and high price of N-type silicon wafers, and achieve the effects of improving photoelectric conversion efficiency, high photoelectric conversion efficiency and simple structure

Active Publication Date: 2019-12-31
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the price of N-type silicon wafers is high, and the process of N-type double-sided solar cells is complicated; therefore, how to develop high-efficiency and low-cost double-sided solar cells has become a hot spot for companies and researchers.

Method used

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  • Preparation method of p-type perc double-sided solar cell
  • Preparation method of p-type perc double-sided solar cell
  • Preparation method of p-type perc double-sided solar cell

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Embodiment approach

[0047] It should be noted that the first laser grooving unit 81 has multiple implementations, including:

[0048] (1) Each group of first laser grooving units 81 includes a first laser grooving body 82 arranged in a horizontal direction. At this time, the first laser grooving units 81 are continuous linear grooving areas, specifically as Figure 4 shown. A plurality of first laser grooving units 81 are arranged vertically.

[0049] (2) Each group of first laser grooving units 81 includes a plurality of first laser grooving bodies 82 arranged in a horizontal direction. At this time, the first laser grooving units 81 are line-segment non-continuous linear grooving areas, specifically Such as image 3 shown. The plurality of first laser grooved bodies 82 may be two, three, four or more, but not limited thereto. A plurality of first laser grooving units 81 are arranged vertically.

[0050] When each group of first laser grooving units 81 includes a plurality of first laser gr...

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Abstract

Provided is a P-type PERC double-sided solar cell, comprising back sliver electrodes (1), back aluminum gate lines (2), a back passivation layer (3), P-type silicon (4), an N-type emitter (5), a front silicon nitride film (6), and a front silver electrode (7) in sequence. The back sliver electrodes are vertically connected to the back aluminum gate lines; intervals between the back aluminum gate lines are not equal; a first laser grooving area is formed by performing laser grooving on the back passivation layer; the back aluminum gate lines are connected to the P-type silicon by means of the first laser grooving area; the first laser grooving area comprises multiple groups of first laser grooving units which are provided horizontally; each group of first laser grooving units comprises one or more first laser grooving bodies which are provided horizontally; the back aluminum gate lines are vertical to the first laser grooving bodies.

Description

technical field [0001] The present invention relates to the field of solar cells, in particular to a P-type PERC double-sided solar cell, a solar cell module using the above-mentioned P-type PERC double-sided solar cell, and a solar system using the above-mentioned P-type PERC double-sided solar cell. Background technique [0002] Crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. Under the action, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. [0003] Traditional crystalline silicon solar cells basically only use front passivation technology, depositing a layer of silicon nitride on the front of the silicon wafer by PECVD to reduce the recombination rate of minority carriers on the front surface, which can greatly increase the open circuit voltage a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/04
CPCH01L31/022425H01L31/022433H01L31/04Y02E10/50
Inventor 方结彬何达能陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD