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All-optical diode

An all-optical diode, metal technology, applied in the fields of nanophotonics and integrated optics, can solve the problem of low forward transmittance

Active Publication Date: 2017-06-27
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Hwang and Song pointed out that by combining the photonic bandgap effect and the unique interfacial properties of the asymmetric liquid crystal photonic bandgap heterostructure, low-power all-optical diodes can be realized without adjusting optical nonlinearity, but its forward transmittance is also low. Not high, about 40%

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Embodiment Construction

[0017] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0018] Such as figure 1 Shown is a cross-sectional view of an all-optical diode device, including a metal-dielectric-metal waveguide structure MIM and a distributed Bragg reflector (DBR)-metal-homogeneous dielectric structure inside the waveguide. The size of the MIM waveguide 1 and the DBR-metal-homogeneous dielectric structure inside the waveguide has the same order of magnitude as the wavelength of the incident light, but smaller than the wavelength of the incident light. The metal constituting the MIM waveguide 1 and the metal in the DBR-metal-homogeneous dielectric structure can be the same o...

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Abstract

The invention discloses an all-optical diode. The all-optical diode includes a metal-medium-metal waveguide structure, the waveguide includes a DBR-metal-homogeneous medium structure, the DBR is formed by a medium A with a high refractive index and a medium B with a low refractive index in periodical arrangement, the periodicity is N, the refractive indexes of the medium A and the medium B are n and n respectively, the thicknesses are d and d respectively, and satisfies a formula provided in the description, wherein omega<0> in the formula is Bragg frequency; the metal thickness in the DBR-metal-homogeneous medium structure is smaller than the skin depth of the operating wavelength lambda of the all-optical diode; the refractive index of the homogeneous medium in the DBR-metal-homogeneous medium structure is n<C>, the thickness is d<C>, and the operating wavelength lambda of the all-optical diode device satisfies an F-P resonance condition n<C>d<C>=j[lambda] / 2, wherein j is an integer. The all-optical diode provided by the invention has the characteristics of simple structure, small size, adjustable operating wavelength and the like, and has important application prospects in the fields of photon integration, all-optical networks and the like.

Description

technical field [0001] The invention relates to the field of nanophotonics and integrated optics, in particular to an all-optical diode based on an optical Tamm state. Background technique [0002] All-optical diodes are one of the indispensable components in future integrated photonic circuits, similar to electronic diodes, which allow light waves to propagate in only one direction. Among the nanoscale all-optical diode schemes that have been proposed so far, the main structures used are: nonlinear photonic crystals and photonic bandgap microcavities, chiral photonic crystals with anisotropic defect layers, and left-handed photonic crystals with Kerr nonlinear defect layers. Periodic structure, low symmetry magnetic photonic crystal, periodically poled lithium niobate waveguide, photonic crystal fiber. Due to the relatively small nonlinear optical sensitivity and magneto-optic coefficient of conventional materials, the operating threshold is generally required to be very h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00G02F1/35G02F1/365
CPCG02F1/3544G02F1/365G02B5/008
Inventor 陆云清许敏成心怡许吉王瑾
Owner NANJING UNIV OF POSTS & TELECOMM