An organic electroluminescent device

An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem of low efficiency and achieve the effect of reducing the problem of efficiency roll-off

Active Publication Date: 2019-08-16
KUNSHAN NEW FLAT PANEL DISPLAY TECH CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For this reason, the technical problem to be solved by the present invention is that the light-emitting host material in the prior art has a lower triplet T 1 And the smaller energy gap Eg (the energy level difference between HOMO and LUMO) leads to the problem of low efficiency of exciton recombination, and then provides an organic electroluminescent device, using thermally activated delayed fluorescent material as the host material limit The recombination of excitons in the light-emitting region effectively suppresses the efficiency roll-off phenomenon, and the device efficiency is increased to 13% to 18%.

Method used

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  • An organic electroluminescent device
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Embodiment 1

[0086] The device structure of the present embodiment 1 is as follows:

[0087] ITO / HATCN[5nm] / NPB[30nm] / HTL[10nm] / Formula (1-24): CBP:1wt%DCJTB[30nm] / ETL[40nm] / LiF[0.5nm] / Al[150nm]

[0088] The device of the present embodiment 1 is composed of substrate, anode layer (ITO), hole injection layer (HATCN), first hole transport layer (NPB), second hole transport layer HTL, light emitting layer (formula (1-24) ): CBP: 1wt% DCJTB), electron transport layer (ETL), insulating buffer layer (LiF), cathode layer (Al), the main material of the light-emitting layer is the thermally activated sensitized fluorescent material shown in formula (1-24) and The hole-transporting material is composed of CBP, and the mass ratio of the two is 1:9. The first triplet state of the hole transport layer material is higher than the first singlet state of the exciplex produced by the host material, and the first triplet state of the electron transport layer material is higher than the first singlet state ...

Embodiment 2

[0096] The device structure of the present embodiment 2 is as follows:

[0097] ITO / HATCN[5nm] / NPB[30nm] / HTL[10nm] / TCTA:CzTrz:10wt%DMQA[30nm] / ETL[40nm] / LiF[0.5nm] / Al[150nm]

[0098] The device of present embodiment 2 is by substrate, anode layer (ITO), hole injection layer (HATCN), first hole transport layer (NPB), second hole transport layer (HTL), light-emitting layer (TCTA: CzTrz: 10wt% DMQA), electron transport layer (ETL), insulating buffer layer (LiF), cathode layer (Al), the main material of the light-emitting layer is composed of hole transport material TCTA and electron transport material CzTrz, the mass ratio of the two It is 2:3. The first triplet state of the hole transport layer material is higher than the first singlet state of the exciplex produced by the host material, and the first triplet state of the electron transport layer material is higher than the first singlet state of the exciplex produced by the host material. State high.

Embodiment 3

[0105] The device structure of the present embodiment 3 is as follows:

[0106] ITO / HATCN[5nm] / NPB[30nm] / HTL[10nm] / Formula (1-9): PPT:10wt%BCzVBi[30nm] / ETL[40nm] / LiF[0.5nm] / Al[150nm]

[0107] The device of the present embodiment 3 consists of a substrate, an anode layer (ITO), a hole injection layer (HATCN), a first hole transport layer (NPB), a second hole transport layer (HTL), a light-emitting layer (formula (1 -9): PPT: 10wt% BczVBi), electron transport layer (ETL), insulating buffer layer (LiF), cathode layer (Al), the main material of the light-emitting layer is a hole transport material formula (1-9) and electron The transmission type material is composed of PPT, and the mass ratio of the two is 9:1. The first triplet state of the hole transport layer material is higher than the first singlet state of the exciplex produced by the host material, and the first triplet state of the electron transport layer material is higher than the first singlet state of the exciplex pr...

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Abstract

The present invention involves a kind of mechanical and electrical lighting device. The main material of the luminous layer is the composition of the material of the cavity transmission and the electronic transmission ability. 1 H Single -level Smart Smart Smart Smart S 1 F ; The three -line state energy level T in the at least one material in the main material of the material 1 H Single -line energy level S, which is higher than N‑π excited state 1 H , And t 1 H Crickets 1 H ≤0.3EV; or, at least one material in the main material CT excited state of the three -line state energy level T 1 H Three -line state energy level S, higher than N‑π excited state 1 H , And T 1 H Crickets 1 H ≥1EV, and the difference between the second and third -line state -level energy level and CT stimulation of the main material of the main material is ‑0.1 ~ 0.1EV; the organic functions adjacent to the light layer areThe three -line state T of the layer of the material 1 Both are higher than the single -line SNE SIO 1 H EssenceThe thermal activation delayed fluorescent materials used by the present invention limits the compound of the luminous area as the main material, which effectively suppresss the efficiency rolling phenomenon. The efficiency of the device is improved to 13 % to 18 %.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescent devices, and specifically designs an organic electroluminescent device using a heat-activated delayed fluorescent material as a main material. Background technique [0002] The light-emitting layer of the organic electroluminescent device OLED is mainly made of all fluorescent materials, all phosphorescent materials or a mixture of fluorescent materials and phosphorescent materials. Among them, the light-emitting layer generally adopts a high triplet T 1 , a host material with a wide energy gap. The organic light-emitting material system includes a fluorescent system and a phosphorescent light-emitting system. A doped system is used, and the fluorescent system only uses the singlet exciton energy. The ideal internal quantum efficiency is only 25%. Low, while the phosphorescent system can utilize singlet and triplet exciton energy at the same time, and the internal quantum effic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50
CPCH10K85/324H10K50/121H10K50/11H10K2101/40H10K2101/10
Inventor 赵菲
Owner KUNSHAN NEW FLAT PANEL DISPLAY TECH CENT
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