An organic electroluminescent device
An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem of low efficiency and achieve the effect of reducing the problem of efficiency roll-off
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Embodiment 1
[0086] The device structure of the present embodiment 1 is as follows:
[0087] ITO / HATCN[5nm] / NPB[30nm] / HTL[10nm] / Formula (1-24): CBP:1wt%DCJTB[30nm] / ETL[40nm] / LiF[0.5nm] / Al[150nm]
[0088] The device of the present embodiment 1 is composed of substrate, anode layer (ITO), hole injection layer (HATCN), first hole transport layer (NPB), second hole transport layer HTL, light emitting layer (formula (1-24) ): CBP: 1wt% DCJTB), electron transport layer (ETL), insulating buffer layer (LiF), cathode layer (Al), the main material of the light-emitting layer is the thermally activated sensitized fluorescent material shown in formula (1-24) and The hole-transporting material is composed of CBP, and the mass ratio of the two is 1:9. The first triplet state of the hole transport layer material is higher than the first singlet state of the exciplex produced by the host material, and the first triplet state of the electron transport layer material is higher than the first singlet state ...
Embodiment 2
[0096] The device structure of the present embodiment 2 is as follows:
[0097] ITO / HATCN[5nm] / NPB[30nm] / HTL[10nm] / TCTA:CzTrz:10wt%DMQA[30nm] / ETL[40nm] / LiF[0.5nm] / Al[150nm]
[0098] The device of present embodiment 2 is by substrate, anode layer (ITO), hole injection layer (HATCN), first hole transport layer (NPB), second hole transport layer (HTL), light-emitting layer (TCTA: CzTrz: 10wt% DMQA), electron transport layer (ETL), insulating buffer layer (LiF), cathode layer (Al), the main material of the light-emitting layer is composed of hole transport material TCTA and electron transport material CzTrz, the mass ratio of the two It is 2:3. The first triplet state of the hole transport layer material is higher than the first singlet state of the exciplex produced by the host material, and the first triplet state of the electron transport layer material is higher than the first singlet state of the exciplex produced by the host material. State high.
Embodiment 3
[0105] The device structure of the present embodiment 3 is as follows:
[0106] ITO / HATCN[5nm] / NPB[30nm] / HTL[10nm] / Formula (1-9): PPT:10wt%BCzVBi[30nm] / ETL[40nm] / LiF[0.5nm] / Al[150nm]
[0107] The device of the present embodiment 3 consists of a substrate, an anode layer (ITO), a hole injection layer (HATCN), a first hole transport layer (NPB), a second hole transport layer (HTL), a light-emitting layer (formula (1 -9): PPT: 10wt% BczVBi), electron transport layer (ETL), insulating buffer layer (LiF), cathode layer (Al), the main material of the light-emitting layer is a hole transport material formula (1-9) and electron The transmission type material is composed of PPT, and the mass ratio of the two is 9:1. The first triplet state of the hole transport layer material is higher than the first singlet state of the exciplex produced by the host material, and the first triplet state of the electron transport layer material is higher than the first singlet state of the exciplex pr...
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