Scratch control system and control method for sapphire substrate polishing

Abstract

The invention relates to a scratch control system and control method for sapphire substrate polishing, belongs to the technical field of polishing, and solves the problems of low production efficiency, low quality and the like of an existing CMP (Chemical Mechanical Polishing). An automatic adjustment control device of the scratch control system is connected with a polishing machine, a water chiller, a temperature sensor, a resistance measurer and a PH sensor respectively; the lower part of a rotating shaft of the polishing machine is connected with a polishing head; the resistance measurer is arranged at a joint of the rotating shaft and the polishing head; a polishing disk of the polishing machine is arranged below the polishing head; a polishing pad is adhered to the polishing disk; the temperature sensor and a polishing fluid flowing pipe are arranged above the polishing pad; the temperature sensor is used for detecting machining temperature of the polishing disk; the polishing fluid flowing pipe is connected with a fluid extraction pump; and the PH sensor is arranged in a polishing fluid tank and detects a PH value of polishing fluid. After process conditions are set, the control system is started to automatically carry out sapphire substrate polishing and scratch control. According to the scratch control system, the cost is reduced, and the sapphire substrate polishing quality and efficiency are improved.

Description

technical field [0001] The invention relates to a scratch control system and a control method for polishing a sapphire substrate, belonging to the technical field of polishing. Background technique [0002] The techniques for polishing the sapphire substrate mainly include mechanical polishing, chemical polishing, and chemical mechanical polishing (CMP). Although mechanical polishing can achieve global planarization, it is difficult to achieve nanoscale polishing with a surface roughness Ra of less than 1nm; although chemical polishing can achieve nanoscale polishing, it cannot achieve global planarization; chemical mechanical polishing technology is a combination of mechanical grinding and chemical corrosion. The combined technology, which forms a smooth and flat surface on the processed surface by means of the abrasive action of ultrafine particles and the chemical corrosion of the slurry, is currently the most mature method for achieving global planarization of sapphire s...

AI Technical Summary

Problems solved by technology

However, the disadvantages of this method are slow efficiency and high cost. With the development of the industry, the requirements for production efficiency and cost are becoming more and more stringent, and this method is gradually being eliminated; another commonly used method is to directly use rough Throw pads for CMP, then inspect, and rework products with obvious scratches to improve production efficiency and processing costs by reducing surface quality requirements. The disadvantage of this method is that the product quality is unstable and the rework rate is high.

Images