Semiconductor structure and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as poor electrical performance of semiconductor devices, achieve good film quality, improve electrical performance, and improve quality.
Active Publication Date: 2020-01-03
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0006] However, the electrical performance of the semiconductor device formed by the prior art is poor
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[0027] The electrical performance of the semiconductor device in the prior art is poor, and the reason is analyzed in combination with the manufacturing method of the semiconductor structure. refer to Figure 1 to Figure 5 , shows a structural schematic diagram corresponding to each step of a manufacturing method of a semiconductor structure in the prior art. The manufacturing method of described semiconductor structure comprises the following steps:
[0028] refer to figure 1 , forming a semiconductor base, the semiconductor base includes a substrate 100, fins protruding from the substrate 100; the substrate 100 includes a first region I and a second region II, protruding from the first region I The fin of the substrate 100 is the first fin 110 , and the fin protruding from the second region II of the substrate 100 is the second fin 120 . The first region I is used to form peripheral devices, and the second region II is used to form core devices.
[0029] Specifically, th...
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Abstract
The invention relates to a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the steps of forming a substrate comprising a first region and a second region; forming a first pseudo gate structure in the first region and forming a second pseudo gate structure in the second region, wherein the first pseudo gate structure comprises a pseudo gate oxide layer and a first pseudo gate electrode layer, the second pseudo gate structure comprises a second pseudo gate oxide layer and a second pseudo gate electrode layer; forming a dielectric layer at the surface of the substrate; removing the first pseudo gate electrode layer and forming a first opening in the dielectric layer; forming a side wall protection layer at the side wall of the first opening; forming a first gate oxide layer at the bottom of the first opening after the first pseudo gate oxide layer is removed; and forming a gate structure and a second gate structure in the first region and the second region respectively. According to the invention, a material layer of the side wall of the first opening is prevented from being oxidized by an oxidation process of forming the first gate oxide layer through forming the side wall protection layer, so that the quality of the first gate structure is improved, and thus electrical properties of a semiconductor device are improved.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In semiconductor manufacturing, with the development trend of VLSI, the feature size of integrated circuits continues to decrease. In order to adapt to the reduction of feature size, the channel length of MOSFET field effect transistors is also continuously shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in order to better adapt to the reduction of feature size, t...
Claims
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IPC IPC(8): H01L21/8234H01L27/088
CPCH01L21/823431H01L21/823462H01L27/0886
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP