Semiconductor structures and methods of forming them

Abstract

The present invention provides a semiconductor structure and a method for forming the same. A substrate is provided; a gate dielectric layer is formed on the substrate; a gate layer is formed on the gate dielectric layer; an amorphous layer covering the gate layer is formed ; patterning the gate layer and the amorphous layer to form a gate structure. Among them, the present invention forms an amorphous layer by amorphizing the gate layer. The amorphous layer is amorphous. The cleaning agent that reaches the gate dielectric layer through the gate layer can reduce the probability of holes in the gate dielectric layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous improvement of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. The improvement of semiconductor integration has also led to the reduction of transistor size. [0003] The semiconductor substrate, the gate layer and the gate dielectric layer under the gate layer are the basic components of the transistor. The gate dielectric layer plays an important role in the transistor, which can realize the electrical insulation between the gate and the channel of the transistor, and make the gate and the channel of the transistor form a capacitive structure, so that the control of the gate to the channel current can be realized. [0004] As the size of the transistor decreases, the ...

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Problems solved by technology

However, the quality of the gate dielectric layer formed by the prior art is not high, which affects the performance of the transistor and reduces the yield rate of semiconductor device manufacturing

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