A three-dimensional electric field modulation low leakage terminal protection structure

Abstract

The invention discloses a three-dimensional electric field modulation low-leakage terminal protection structure. The three-dimensional electric field modulation low-leakage terminal protection structure comprises an active area, a device isolation area and a terminal protection area positioned between the active area and the device isolation device, wherein the terminal protection area is provided with a plurality of polygonal injection areas; each side of the polygonal injection areas and the main junction of the active area form an included angle, so that the included angle formed by an electric field of the terminal protection area and the main junction of the active area is not equal to 90 degrees, and the electric field component vertical to the active area part is reduced. In the invention, the included angle of each side of the injection areas and the main junction of the active area is used for adjusting the electric field of the terminal protection area to be not in the direction vertical to the main junction. Namely, the electric field component vertical to the direction of the active area is reduced by introducing the electric field component in other directions, and then electric leakage of the terminal protection area is reduced.

Description

technical field [0001] The invention relates to semiconductor device technology, in particular to a three-dimensional electric field modulation low-leakage terminal protection structure and a three-dimensional electric field modulation low-leakage terminal protection structure. Background technique [0002] SiC materials have large bandgap width, high breakdown electric field, high saturation drift velocity and high thermal conductivity. The superior properties of these materials make them ideal materials for making high-power, high-frequency, high-temperature-resistant, and radiation-resistant devices. The advantage of silicon carbide lies in the production of high-voltage devices, so in order to give full play to its material advantages, it is necessary to improve the terminal protection efficiency as much as possible and reduce device leakage. [0003] So far, there are many types of terminal protection, including floating field limiting rings, junction terminals, field p...

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Problems solved by technology

[0004] After studying and analyzing various existing technologies, the applicant found that due to the insufficient surface passivation ability caused by defects in materials, interfaces and passivation layers in actual device processing, it is necessary to extend the length of the terminal protection area in order to achieve a higher terminal protection efficiency , which reduces the utilization of the wafer surface and increases the cost of device processing

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