A realization method and structure of light control igbt based on tunneling effect

Abstract

The invention relates to the semiconductor device design field, provides a light-operated IGBT realization method and device and aims to solve problems in the prior art. Laser pulses are utilized to control formation of a conductive channel in a semiconductor material at a lower portion of a grid, on and off of an IGBT are controlled, and IGBT insulation isolation and long state transition time problems are solved. A light-operated layer for conduction and light transmission is manufactured above a SiO2 layer at a bottom surface of a grid region of the IGBT; a compact metal layer is generated on a top layer of an outer ring layer of the grid, and a leading wire on the metal layer is connected with an outer electrode of the grid of a packaging casing of the IGBT; an inner ring layer is connected with the outer ring layer through the conductive light-operated layer; when the laser pulses irradiate the grid of the IGBT, namely the inner ring layer of the light-operated layer, P-region width below the grid is substantially compressed, under the action of the tunneling effect, N+ and N- region carriers are made to transit through a P region, and thereby IGBT conduction is realized.

Description

technical field [0001] The invention relates to the field of semiconductor device design, in particular to a tunneling effect-based light control IGBT realization method and structure. Background technique [0002] At present, IGBTs are designed as voltage control devices ( figure 1 ), the gate is a metal electrode, a sufficiently high forward drive voltage signal is applied between the gate and the source, and an inversion layer is formed in the P region under the gate, that is, an N-type conduction channel. Through this channel, electrons from the source region of the N + District flows to N - The drift region, up to the N region adjacent to the drain, puts the IGBT into the conduction state. When the positive drive voltage between the gate and the source disappears, and the gate and the source are at the same potential or lower than the source potential, the IGBT is turned off. Therefore, at present, the conduction of the IGBT is controlled by the gate drive voltage s...

AI Technical Summary

Problems solved by technology

By designing a special gate structure (increasing the photocontrol layer, and reducing the area of ​​the dense metal layer used for the electrode lead-out connection of the gate to the range of the outer ring layer) and making it connect with the IGBT source through the current limiting resistor and the voltage stabilizing module , The IGBT drain is connected, and the laser pulse is used to control the formation of the conductive channel under the gate to control the on-off of the IGBT, which is used to solve the problems of IGBT insulation isolation and long state transition time

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