Manufacturing method for high-carrier-mobility MOSFET

Abstract

The invention provides a manufacturing method for a high-carrier-mobility MOSFET. A photoetching process and an etching process are added before a deposition process for an interlayer dielectric layer is performed; the number of etching windows formed in the photoetching process is two; the etching windows expose the region parts on one side, close to a gate lamination layer, of a source region / drain region respectively; then the exposed regions are etched to enable a part of the regions on one side, close to the gate lamination layer, of the source region / drain region to form concave regions; the depths of the concave regions are not higher than those of the source region / drain region; when a semiconductor is N type, a silicon nitride deposition process adopts a deposition process for preparing tensile stress silicon nitride; and when a semiconductor is P type, the silicon nitride deposition process adopts a deposition process for preparing pressure stress silicon nitride. According to the technical scheme, only the photoetching and etching steps are added to the conventional MOSFET technological process, equivalently, a stress layer is introduced to the two sides of a channel region, so that the carrier mobility in the channel region is improved, and convenience in application can be achieved.

Description

technical field [0001] The invention relates to a manufacturing method in the field of semiconductor devices, in particular to a manufacturing method capable of improving the carrier mobility of a MOSFET channel. Background technique [0002] In the current field of integrated circuits, with the continuous improvement of the industry's performance requirements for MOSFETs, the problem of low carrier mobility in the traditional MOSFET channel has attracted increasing attention. In the process of improving the mobility of MOSFET channel carriers, it is currently a feasible technical choice to introduce stress into the channel by preparing stress layer materials at both ends of the channel to improve the mobility. However, compared with the traditional MOSFET manufacturing process, the adoption of the above technical options usually significantly increases the process steps and complicates the process flow. Contents of the invention [0003] The purpose of the present invent...

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Problems solved by technology

However, compared with the traditional MOSFET manufacturing process, the above-mentioned technical options usually significantly increase the process steps and make the process more complicated.

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