MEMS piezoelectric resonator with novel supporting structure

A piezoelectric resonator and support structure technology, applied in the direction of electrical components, impedance networks, etc., can solve the problem of low Q value of MEMS resonators, achieve the effects of reducing energy dissipation, improving quality factor, and reducing anchor point loss

Active Publication Date: 2017-07-25
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
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  • Claims
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Problems solved by technology

[0003] The object of the present invention is to provide a MEMS piezoelectric resonator with a novel support structure for the defects of the low Q value of the existing MEMS resonator in the background technology

Method used

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  • MEMS piezoelectric resonator with novel supporting structure
  • MEMS piezoelectric resonator with novel supporting structure
  • MEMS piezoelectric resonator with novel supporting structure

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Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0024] The present embodiment provides the MEMS piezoelectric resonator of novel supporting structure, and its result is as follows figure 1 , figure 2 , image 3 As shown, an SOI substrate is used, which is composed of a 400 μm polysilicon substrate, a 1 μm silicon dioxide insulating layer and a 10 μm monocrystalline silicon structure layer. Take the MEMS piezoelectric resonator in the transverse vibration mode as an example:

[0025] When the device is manufactured, first grow a layer of silicon dioxide insulating layer on the single crystal silicon, apply photoresist and photolithography, etch with hydrogen fluoride to form 8-1, 8-2, 9-1, 9-2, 10- 1, 10-2, 11-1, 11-2; then use reactive sputtering to obtain piezoelectric film, and then use wet etching to obtain shape 2; then use reactive sputtering to obtain metal film, etch to obtain in...

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Abstract

The invention belongs to the technical field of radio frequency communication and microelectromechanical systems (MEMS), and provides an MEMS piezoelectric resonator with a novel supporting structure in order to overcome the defect that the Q value of the existing MEMS resonator is low. A circular outer frame and an inner supporting beam are additionally arranged in the structure of the MEMS piezoelectric resonator, a connection mode of silicon vibrating block-inner supporting beam-circular outer frame-outer supporting beam-substrate is adopted, the connection position of the circular outer frame and the outer supporting beam is selected at a standing wave node when mechanical waves are transmitted in the circular outer frame, therefore the two strands of mechanical waves transmitted by the inner supporting beam are inverted at the node so as to be mutually counteracted, thereby greatly reducing the energy consumption resulting from that a resonance body is transmitted to the substrate by the supporting beam and reducing the loss of anchor points, and accordingly, the quality factor Q of the resonator is improved.

Description

technical field [0001] The invention belongs to the technical field of radio frequency communication and micro-electromechanical systems (MEMS), relates to a MEMS piezoelectric resonator, and specifically provides a MEMS piezoelectric resonator with a novel support structure. Background technique [0002] With the further requirements of electronic equipment for high performance and miniaturization, electronic components are developing in the direction of high performance, low cost, and low power consumption; high quality factor (Q value), miniaturized resonators become the future electronics Bottlenecks in on-chip and miniaturization of communication systems. The MEMS piezoelectric resonator is a high-performance RF piezoelectric resonator device based on mechanical vibration made using MEMS technology. The input electrical signal is converted into mechanical vibration through electromechanical coupling. The filtering function is completed in the mechanical domain, and then...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H9/24
CPCH03H9/02338H03H9/02433H03H9/2405H03H2009/0244
Inventor 鲍景富李昕熠秦风张超张亭张翼
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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