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Capacitive sensors

A capacitive sensor and sensor electrode technology, applied in the field of sensors, to achieve the effect of reducing parasitic electrostatic capacitance

Inactive Publication Date: 2017-08-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The conventional capacitive sensors described above encounter the challenge of forming the recessed region 115 at one or more edges of the semiconductor chip 120 and experience a relatively large parasitic electrostatic capacitance between the semiconductor chip 120 and the sensor electrodes 140

Method used

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Embodiment Construction

[0072] Hereinafter, some exemplary embodiments will be explained in further detail with reference to the accompanying drawings.

[0073] [Example of capacitive sensor]

[0074] Figure 2A to Figure 2D It is a cross-sectional view illustrating a capacitive sensor according to an exemplary embodiment of the inventive concept.

[0075] Reference Figure 2A The capacitive sensor 101 may include a semiconductor chip 120 and one or more sensor electrodes 140 disposed on the top surface of the semiconductor chip 120. The sensor electrode 140 can be a transparent electrode, and the transparent electrode can be made of indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), cadmium tin oxide (cadmium Tin oxide (CTO), graphene (graphene), carbon nanotube (carbon nanotube, CNT), etc. are formed or may contain indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), cadmium tin oxide (CTO) ), graphene, carbon nanotube (CNT), etc. Alternatively, the sensor electrode 140 ma...

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Abstract

A capacitive sensor including a substrate, a semiconductor chip on the substrate, at least one bonding wire electrically connecting a top surface of the semiconductor chip to a top surface of the substrate, and a plurality of sensor electrodes on the top surface of the semiconductor chip may be provided. In particular, heights of the sensor electrodes may be provided to be greater than a height of the at least one bonding wire with respect to the top surface of the semiconductor chip. The capacitive sensor may have a reduced parasitic capacitance.

Description

[0001] Cross reference of related applications [0002] This patent application claims the priority of Korean Patent Application No. 10-2015-0179416 filed in the Korean Intellectual Property Office on December 15, 2015, and claims that the application filed in the U.S. Intellectual Property Office on December 9, 2016 Priority of US Patent Application No. 15 / 374,549, the entire contents of the Korean patent application and the US patent application are incorporated herein by reference. Technical field [0003] Exemplary embodiments of the inventive concept relate to sensors, and in particular, to capacitive sensors. Background technique [0004] A capacitive sensor is a sensing device that can sense relatively light tactile (or manipulation) input based on capacitive coupling compared to a pressure sensor. Therefore, capacitive sensors are widely used to implement user interfaces of portable devices (for example, mobile phones or tablets). Therefore, there is an increasing demand f...

Claims

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Application Information

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IPC IPC(8): H03K17/96
CPCH03K17/962H03K2217/96015G06F2203/04103G06F3/0443G06F3/0448H01L2224/48091H01L2224/8592H01L2924/10157H01L2224/73265H01L2924/00014G06F3/0444
Inventor 张在浚
Owner SAMSUNG ELECTRONICS CO LTD