Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of three-dimensional layered niznal semiconductor multi-metal oxide composite material and its preparation method and application

A multi-metal oxide and composite material technology, which is applied in the field of three-dimensional layered NiZnAl semiconductor multi-metal oxide composite materials and its preparation and application, can solve the problems of poor selectivity, high cost, low sensitivity, etc. The preparation method is simple and the effect of improving sensitivity

Active Publication Date: 2019-12-27
HEILONGJIANG UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention is in order to solve existing NO x The sensor has problems such as low sensitivity, poor selectivity and high cost at room temperature, and provides a preparation method and application of a three-dimensional layered NiZnAl semiconductor multi-metal oxide composite material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of three-dimensional layered niznal semiconductor multi-metal oxide composite material and its preparation method and application
  • A kind of three-dimensional layered niznal semiconductor multi-metal oxide composite material and its preparation method and application
  • A kind of three-dimensional layered niznal semiconductor multi-metal oxide composite material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0033] Embodiment 1: In this embodiment, the three-dimensional layered NiZnAl semiconductor multi-metal oxide composite material is made of nickel nitrate, aluminum nitrate, zinc nitrate, surfactant and precipitant;

[0034] The surfactant is sodium lauryl sulfate; the precipitant is an aqueous urea solution, and the concentration of the aqueous urea solution is 0.001 to 1mol / L;

[0035] The mol ratio of described nickel nitrate, zinc nitrate and aluminum nitrate is 2:(3~5):(2~4); The mol ratio of described aluminum nitrate and surfactant is 2:(2~4); The molar ratio of aluminum nitrate to precipitation agent is 1: (8.9-9.9).

[0036] This embodiment has the following beneficial effects:

[0037] 1. In the preparation process of the three-dimensional layered NiZnAl semiconductor multi-metal oxide composite material in this embodiment, the surfactant is used as the template agent and the intercalation anion, thereby realizing the control of the sample morphology and interlayer ...

specific Embodiment approach 2

[0042] Specific embodiment two: the preparation method of the three-dimensional layered NiZnAl semiconductor multi-metal oxide composite material of the present embodiment is carried out according to the following steps:

[0043] 1. Weigh nickel nitrate, aluminum nitrate, zinc nitrate, surfactant and precipitant as raw materials, add the weighed raw materials into a beaker filled with deionized water, perform ultrasonic treatment for 5-10 minutes, and then stir for 20-30 minutes , to obtain a mixed solution; the mass of the raw material taken by weighing and the volume ratio of deionized water are 0.8g:(35~45)mL;

[0044] 2. Pour the mixed solution obtained in step 1 into a stainless steel autoclave, heat the stainless steel autoclave in a water bath at 120 to 200 ° C for 4 to 20 hours, and then cool the stainless steel autoclave to room temperature;

[0045] 3. Filter the solution obtained in the stainless steel autoclave in step 2 to obtain a precipitate, remove impurities a...

specific Embodiment approach 3

[0053] Specific embodiment three: this embodiment is different from specific embodiment two in that: the mol ratio of nickel nitrate, zinc nitrate and aluminum nitrate described in step one is 2:(3~5):(2~4); The molar ratio of aluminum to the surfactant is 2: (2-4); the molar ratio of the aluminum nitrate to the precipitation agent is 1: (8.9-9.9). Other steps and parameters are the same as in the second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sensitivityaaaaaaaaaa
Sensitivityaaaaaaaaaa
Sensitivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a three-dimensional laminar NiZnAl semiconductor polyoxometalate composite material and a preparation method and applications thereof, relating to a semiconductor polyoxometalate composite material and a preparation method and applications thereof, and aiming at solving the problems that the existing NOx sensor is low in sensitivity, poor in selectivity and high in cost at room temperature. The composite material is prepared from nickel nitrate, aluminium nitrate, zinc nitrate, surfactant and precipitator. The preparation method comprises the following steps: I. preparing a combined solution of nickel nitrate, aluminium nitrate, zinc nitrate, surfactant and precipitator; II. performing water bath heating; III. filtering, washing and drying the obtained precipitate to obtain a precursor; and IV. calcinating the precursor. The composite material is applied to preparation of a gas-sensitive element as a sensitive material. The composite material has protruding selectivity, adsorption reversibility and high sensitivity. The three-dimensional laminar NiZnAl semiconductor polyoxometalate composite material is applicable to preparation and application of a semiconductor polyoxometalate composite material.

Description

technical field [0001] The invention relates to a semiconductor multi-metal oxide composite material, a preparation method and application. Background technique [0002] As we all know, nitrogen oxides are a type of typical air pollutants. Nitrogen oxides can react with volatile organic compounds to generate ozone, which can cause respiratory diseases, acid rain or other toxic chemicals, which pose a threat to the environment and human health. Great threat. [0003] Therefore, the development of various types of gas sensors for rapid and accurate detection of toxic nitrogen oxides at room temperature is very important for human life, production and other activities. Metal oxide semiconductor gas sensors have the advantages of simple structure, low price, high sensitivity, and rapid response. After long-term research and development, they are widely used in various industries such as the environment, food, and home improvement. However, it is difficult for a single semicond...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 李丽史克英张雪影洪大海
Owner HEILONGJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com