The invention discloses a preparation method of a
formamide-
ethylene glycol
system Al2O3 film for a
semiconductor product, and relates to the technical field of
semiconductor film preparation, and the preparation method comprises the following steps: preparing an aluminum salt precursor solution by using
aluminum nitrate nonahydrate as an aluminum source, judging a
coating state by using a
viscosity coating window under a constant temperature condition, and carrying out sealed standing
filtration; performing
ultraviolet /
ozone treatment on the substrate, spin-
coating to form a film, and performing segmented pre-
drying; the pre-dried film adsorbs water in a controlled
humidity atmosphere to induce polycondensation, the
humidity is controlled according to
dew point or
humidity reading, a polycondensation window is judged according to
mass increment per unit area, and the
dew point or
retention time is adjusted back during deviation; performing
ultraviolet /
ozone treatment on the film and controlling the temperature of the substrate under the condition that a polycondensation window is established, then performing
oxygen plasma treatment to form a densified
surface layer, and curing in an oxidizing
atmosphere to obtain an Al2O3 film; and when the target film thickness is increased, carrying out stack coating. The obtained film comprises a bulk phase layer and a surface densification layer, and can be used as a
gate dielectric layer, a
passivation layer or a
barrier layer.