Avalanche photodiode device and adjustment method for structure parameters of avalanche photodiode device
An avalanche photoelectric and adjustment method technology, applied in the field of diodes, can solve the problems of wasting time, manpower and material resources, expensive, and high cost, and achieve the effects of avoiding cumbersome processes, reasonable structural parameters, and good electric field distribution.
Inactive Publication Date: 2017-08-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
[0004] Due to the long preparation cycle of avalanche photodiode devices, including a series of essential processes (about 3 to 6 months) such as parameter design, material growth, process preparation, and device packaging, and the high cost, it is necessary to use expensive Materials, semiconductor process equipment and human resources, so the production cycle of semiconductor devices is long and the cost is high
Therefore, when the structural parameters are not designed properly, a lot of time, manpower and material resources will be wasted.
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[0030] In the design stage of device structure parameters, it is extremely important to design a reasonable avalanche photodiode device parameter structure in advance. The performance of an avalanche photodiode device depends on the electric field distribution inside the device, and the electric field distribution inside the device depends on the structural parameters of the device. Therefore, the method of calculating the internal electric field of avalanche photodiode devices by numerical calculation has been widely concerned and studied. The two-dimensional device simulator ATLAS in SILVACO TCAD can simulate the electrical, optical and thermal behavior of semiconductor devices, and can accurately simulate the avalanche photodiode.
[0031] The purpose of the present invention is to provide a design method of a near-infrared avalanche photodiode device based on electric field adjustment. This method adjusts the structural parameters of the device in advance, avoids the cumb...
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Abstract
The invention provides an adjustment method for structure parameters of an avalanche photodiode device. Electric field distribution in the diode device is calculated through the structure parameters of the diode device; initial electric field distribution after simulation is compared with preset electric field distribution; according to a theoretical formula derivation result, the structure parameters are corrected reversely; and the processes are repeated until relatively optimal electric field distribution is obtained. According to the adjustment method, a large amount of time, manpower and material resources can be saved; and the avalanche photodiode device prepared with the method has more reasonable structure parameters and better performance.
Description
technical field [0001] The invention relates to the field of diodes, in particular to a method for adjusting structural parameters of an avalanche photodiode device, and also to an avalanche photodiode device. Background technique [0002] Near-infrared avalanche photodiodes have extremely important applications in traditional fields such as weak light detection, infrared imaging, and optical fiber communication. In recent years, with the rapid development of emerging photon counting fields such as quantum communication, three-dimensional imaging, and time-resolved spectroscopy, near-infrared avalanche photodiodes have become increasingly popular due to their low cost, mature technology, high operating temperature, detectable communication bands, and single photons. Many advantages, such as detection ability, make it become the protagonist that has attracted much attention in the field of single photon detection. [0003] The performance of near-infrared avalanche photodiod...
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Login to View More IPC IPC(8): G06F17/50H01L31/107
CPCG06F30/20G06F30/398H01L31/1075
Inventor 曹思宇李传波余凯张均营成步文王启明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI