Memory resistor neural network training method based on fuzzy Boltzmann machine
A limited Boltzmann machine network and neural network training technology, applied in the information field, can solve the problems of random fluctuations of electronic synapses, affecting the performance of neural networks, etc., to achieve the effect of enhancing robustness
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[0039] The present invention is further described through specific embodiments below in conjunction with the accompanying drawings, but the embodiments are only used to describe the content of the invention, and do not limit the scope of the present invention in any way.
[0040] It is difficult to fundamentally overcome the influence of the fluctuation of the device itself in the existing training methods using memristors as synapses in neuromorphic hardware. The present invention proposes a memristor based on fuzzy Boltzmann machine. A neural network training method that improves the tolerance of the network to device fluctuations by introducing fuzziness.
[0041] The following adopts Pt / TaOx / Ta type memristor to further describe the specific implementation of the present invention, wherein, the thickness of TaOx as the key resistive layer is about 12nm, and the size of the device is 2x2um 2 . In the specific training process, parameter iteration is an ongoing process.
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