Ultra-fast biasing temperature instability test system and method applied to semiconductor device

Abstract

The invention discloses an ultra-fast biasing temperature instability test system and method applied to a semiconductor device. The system comprises an arbitrary waveform generator, a waveform processor, an input probe, an output probe and a drain bias module. The arbitrary waveform generator generates a stress voltage signal, a restore voltage signal and a measuring voltage signal that have precisely controllable levels and time; and a gate voltage signal is loaded at a gate of a measured device by the input probe. According to the invention, the voltage amplitude and time that can generate a BTI effect can be controlled precisely; the BTI effect in extremely short time can be represented; and the test sensitivity is high. The representation of a threshold voltage drift can be realized in very short time; the test result is little affected by a restoring effect of a BTI effect; and thus accurate measurement is realized. The system and method can be applied to electrical characteristic studies of high-performance planar transistors using silicon, germanium, III-V class compounds as carrier channels, a fin-type three-dimensional gate, a field-effect transistor having a ring-gate (GAA) structure.

Description

technical field [0001] The invention belongs to the technical field of characterization and testing of the reliability of semiconductor devices, in particular to a method for controlling the bias temperature of high-performance electronic devices, especially Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) within a very short time (<10ns). Stability Characterization Techniques. Background technique [0002] In the past few decades, with the development of CMOS integrated circuit technology, the size of the core unit in the circuit - metal oxide semiconductor field effect transistors (MOSFETs) has gradually decreased in accordance with Moore's law, from a few microns (μm) to 14nm , The density and performance of transistor devices continue to increase. One of the important indicators to measure the reliability of transistor devices is the bias temperature instability (BTI) of semiconductor devices. Bias temperature instability includes negative bias temperatu...

AI Technical Summary

Problems solved by technology

In the existing test method of BTI characteristic, adopt traditional direct current voltage test method to obtain MOSFET transistor drain current I d vs. gate voltage V g The output transfer characteristic curve to find the threshold voltage, usually takes about a few seconds

However, using on-the-fly or other existing fast test methods can reduce the test time of threshold voltage drift to the range of 100 ns, but it is still more than an order of magnitude slower than the recovery effect of BTI characteristics, and it is still impossible to accurately characterize extreme Device BTI characteristics in a short time

Images