Non-polar III group nitride epitaxial thin film

Abstract

The invention discloses a non-polar III group nitride epitaxial thin film. The epitaxial thin film comprises a substrate, a first graphic structure layer an a second graphic structure layer from the bottom up, and a non-polar III group nitride epitaxial thin film which is on the substrate and is grown by penetrating the dual graphic structures, wherein the first graphic structure layer is an insertion layer or a mask structure with certain surface coverage rate; and the second graphic structure layer is of a net-shaped structure which is prepared on the first graphic structure layer and has certain arrangement directivity and periodic property. The non-polar nitride epitaxial growth is performed on the structure, and side epitaxial growth parallel to the surface of the substrate can be triggered to form an island-shaped nitride structure; and when the island-shaped nitride is combined, growth in certain directions is suppressed while growth in a specific direction is promoted, so that the problem of severe growth anisotropy of the non-polar III group nitride can be solved, and the high-quality epitaxial thin film can be obtained.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic materials and device manufacturing, in particular to a non-polar Group III nitride epitaxial thin film. Background technique [0002] Group III nitrides such as AlN, GaN, InN and their ternary and quaternary compounds are direct band gap compound semiconductor materials, which have wide band gap, high breakdown electric field and thermal conductivity, high electron mobility and chemical corrosion resistance, etc. Features, its room temperature bandgap width ranges from 0.7eV of InN to 3.4eV of GaN, to 6.2eV of AlN, and the luminous wavelength of optoelectronic devices prepared by it covers the wavelength range from far infrared to deep ultraviolet. [0003] At present, group III nitride single crystals and their alloys are mainly polar materials obtained by epitaxial growth on C-plane sapphire and other substrates. The stress distribution of the polar group III nitride material is unif...

AI Technical Summary

Problems solved by technology

However, during the growth process, due to the significant anisotropy of the growth rate of the non-polar epitaxial film along different directions, it will directly lead to the distribution of a large number of triangular deep pits with specific directions on the surface of the epitaxial film, and it is difficult to obtain the next step. merge during growth

In addition, the anisotropy of the growth rate will also lead to large differences in the crystal quality of the epitaxial material along different directions, which will deteriorate the crystal quality of the epitaxial layer and seriously affect the device performance.

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