Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Array substrate, manufacturing method thereof, and display device

An array substrate and array arrangement technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increasing drive thin film transistors, cumbersome process, and low production efficiency, so as to increase sub-threshold swing, The production process is simple and the production efficiency is high

Active Publication Date: 2020-02-28
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this manufacturing method, it is necessary to form two layers of gate insulating layers to increase the subthreshold swing of the driving thin film transistor T2, and the process is cumbersome and the manufacturing efficiency is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array substrate, manufacturing method thereof, and display device
  • Array substrate, manufacturing method thereof, and display device
  • Array substrate, manufacturing method thereof, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0057] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0058] In order to solve the problems of cumbersome manufacturing process and low manufacturing efficiency of the double-layer gate insulating layer used to increase the sub-threshold swing of the driving thin film transistor in the prior art, the present invention provides an array using a layer of gate insulating layer substrate. The array substrate includes a plurality of pixel units arranged in an array,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thermal resistanceaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an array substrate, a manufacturing method thereof, and a display device. The switching thin film transistor and the driving thin film transistor in the array substrate include an active layer, a planarized gate insulating layer and a gate, and the active layer is arranged on a base. The thickness of the active layer of the switching thin film transistor is greater than the thickness of the active layer of the driving thin film transistor; the switching thin film transistor and the driving thin film transistor share a planarized gate insulating layer, which is arranged on the active layer and the exposed substrate; the gate of the switching thin film transistor The electrode and the gate of the driving thin film transistor are arranged on the planarized gate insulating layer. The invention has simple process and can improve the manufacturing efficiency of the array substrate.

Description

technical field [0001] The present invention belongs to the field of display technology, and in particular, relates to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] The flat panel display device has many advantages such as thin body, power saving, and no radiation, so it has been widely used. Flat panel display devices mainly include Liquid Crystal Display (LCD for short) and Organic Light Emitting Diode (OLED for short) displays. OLED has the following excellent characteristics: ① self-illumination, no backlight required; ② high contrast; ③ thin thickness; ④ wide viewing angle; ⑤ fast response; ⑥ can be used for flexible panels; The manufacturing process is simple, so it is regarded as a new application technology for the next generation of flat panel displays. [0003] Organic light emitting diode displays can be divided into passive matrix organic light emitting diode displays (Passive Matrix Organic Light Emitti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L27/32H01L29/423H01L21/77
CPCH01L27/1233H01L27/127H01L27/1288H01L29/42364H10K59/12
Inventor 邢磊
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com