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A crystallization method and device based on solution flow

A solution and crystallization technology, applied in chemical instruments and methods, solutions from liquid solvents at room temperature, single crystal growth, etc., can solve the problems of troublesome solution flow, complex devices, high energy consumption, etc., and achieve good universality and simple process , the effect of good application prospects

Active Publication Date: 2019-05-03
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantages of methods such as chemical vapor deposition, area melting and molecular beam epitaxy are that more complex devices are required, and the energy consumption during the growth process is relatively high.
[0004] After a lot of research, the present invention finds that in the solution growth process, the behavior of the supersaturated region plays a very important role, and the solution forms nucleation sites in these places, and the solution behavior plays a crucial role in this process; It was also found that in the current study of solution evaporation-based crystallization methods, the shape of the gas, liquid and solid contact region and the overall shape of the liquid region have a significant impact on the crystallization process; moreover, in these growth methods, the rapid Evaporation tends to introduce defects and the ensuing flow of solution tends to cause problems for the crystallization process

Method used

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  • A crystallization method and device based on solution flow
  • A crystallization method and device based on solution flow
  • A crystallization method and device based on solution flow

Examples

Experimental program
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Embodiment approach

[0034] According to a preferred embodiment of the present invention, the substrate (or substrate) sample is also treated, which mainly refers to hydrophilic treatment or wettability treatment, to obtain a substrate with suitable wettability, for example, the substrate (or substrate) can be Bottom) The sample is placed under surface plasma (plasma) for a certain period of time, for example, for 1 minute to 5 hours, preferably for 2 minutes to 1 hour, more preferably for 5 minutes to 30 minutes. The substrate (or substrate) sample surface is made solvent-affinic. Taking another way as an example, sulfuric acid and hydrogen peroxide solution can be mixed in a certain ratio, the preferred ratio is 7:3 or 6:4, at a certain temperature, preferably 20-120°C, and the sample is treated for a certain period of time. This treatment time is preferably 20-120 minutes.

[0035] Step 2, selecting a solvent and a solute, and optionally adding the solute to the solvent to form a solution.

...

Embodiment 1

[0067] use as Figure 5 The crystallization setup shown,

[0068] Select a silicon wafer with a silicon oxide layer with a thickness of 300nm-320nm on the surface as the substrate 1, and perform hydrophilic treatment on it, that is, place the sample under surface plasma treatment for 10 minutes;

[0069] Choose N,N-dimethylformamide as solvent, CH 3 NH 3 PB 3 Perovskite material precursors (CH 3 NH 3 I and PbI 2 Molar ratio 1:1)) is a solute, after forming a solution, the solution is added dropwise to the surface of the substrate, and under the action of affinity, the solution spreads on the surface of the substrate;

[0070] Select a glass sheet without affinity treatment as the vertical sheet 2, place it vertically on the surface of the substrate spread with the solution 3, and form a wedge-shaped solution area at the junction of the vertical sheet and the substrate;

[0071] Then apply a heat source above the above system, and refrigerate below, and obtain an ultra-l...

Embodiment 2

[0073] Carry out crystallization as in Example 1, the difference is that Si / SiO is selected respectively 2 , glass, mica, PET (polyethylene terephthalate), FTO, ITO as the substrate, N,N-dimethylformamide as the solvent, and the perovskite material (CH 3 NH 3 PB 3 ) solute, select Si / SiO without affinity treatment 2 , glass, mica, PET, FTO, and ITO as vertical sheets, after applying a temperature field, a millimeter-scale perovskite crystal array structure is obtained, such as Figure 6 , where (a) corresponds to Si / SiO 2 , (b) corresponds to glass, (c) corresponds to mica, (d) corresponds to PET, (e) corresponds to FTO, (f) corresponds to ITO.

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Abstract

The invention discloses a crystallizing method based on solution fluidity. In the method, by selecting a suitable substrate and a vertical sheet, a solution area in a certain shape is built, and a crystallizing process is regulated and controlled by further regulating and controlling a fluid process of the solution. The method disclosed by the invention has good universality on all substrates and vertical sheets, and can be widely applied to all crystal materials. According to the method disclosed by the invention, the process is simple, any complicated machines are not added, the dependence to an environment is also avoided, and the method has good application prospect on building large-scale devices.

Description

technical field [0001] The invention relates to a crystallization method, especially a crystallization method based on solution flow, and a used crystallization device, belonging to the field of material chemistry. Background technique [0002] In today's society, the fields of energy, semiconductors, and electronics are developing rapidly. Work units and devices based on these fields have penetrated into all aspects of people's lives and play an important role in people's lives. In the process of building electronic devices, the key working materials of most devices are crystals. How to obtain ordered high-quality crystal materials has always been one of the core issues in the development of these fields. A well-oriented crystal array is a very important structure, which provides more possibilities for the diversification of device functions. The array structure crystal also plays a very significant role in the integration of devices and the improvement of performance. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/06C30B29/22
CPCC30B7/06C30B29/22
Inventor 李彦王昊李逸坦
Owner PEKING UNIV
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