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Thyristor branch fully distributed N+ amplifying gate

A technology of thyristor and auxiliary thyristor, which is applied in the direction of thyristor, electrical components, circuits, etc., can solve the problem that the di/dt tolerance of the turn-on current rise rate cannot be fully exerted, and achieve the effect of improving the tolerance.

Active Publication Date: 2017-09-19
西安派瑞功率半导体变流技术股份有限公司
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AI Technical Summary

Problems solved by technology

[0005] In order to overcome the shortcoming that the traditional high-power thyristor's turn-on current rise rate di / dt tolerance cannot be fully exerted, the present invention designs a thyristor branch full of N+ amplifying gates

Method used

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  • Thyristor branch fully distributed N+ amplifying gate

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Embodiment Construction

[0012] The present invention can basically be completed only by extending the traditional N+ ring-shaped amplifying gate region 2 into branches and proliferating N+ type branch amplifying gate regions 3 during the CAD graphic design of the N+ selectively doped photolithography mask. Afterwards, a photolithography plate is made by a professional plate-making company according to the CAD graphic file, and the photolithography plate can be used in the photolithography process before N+ selective doping. There is no need to make any changes to other structural dimensions and manufacturing processes of the thyristor.

[0013] Thyristor branches are covered with N+ amplifying gates, viewed from the cathode direction of the thyristor, it is divided into central P-type gate area 1, N+-type ring-shaped amplifying gate area 2, N+-type branch amplifying gate area 3, and P-type amplifying area. The gate region 4, the effective cathode region 5 of the N+ type main thyristor, the P-type sho...

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Abstract

The invention provides a thyristor branch fully distributed N+ amplifying gate, the thyristor is overlooked in cathode direction and is divided into a center P-type gate area, an N+-type annular amplifying gate area, an N+-type branch amplifying gate area, a P-type amplifying gate area, an N+-type main thyristor effective cathode area, a P-type short circuit point arranged in the N+-type main thyristor effective cathode area and an edge P-type table area according to doping type area, the N+-type branch amplifying gate area is fully filled by N+-type impurities, so that the amplifying gate which is cathode N+ area for assisting the thyristor exists in annular area around the gate center, goes deep and uniformly cuts the main thyristor cathode area along the amplifying gate branch. According to the invention, the effective cathode for assisting the thyristor is fully extended, the gate triggered current amplification is more sufficient than before, the speed of delivering and transporting the gate triggered current to the deep of the thyristor cathode is faster than before, the triggering strength and speed for main thyristor is enhanced, so that the thyristor turning-on current increasing rate di / dt capability is significantly improved.

Description

technical field [0001] The invention belongs to the technical field of design and manufacture of high-power semiconductor devices, and relates to a super-high-power thyristor with branches full of N+ amplifying gates with extremely high turn-on current rising rate. Background technique [0002] The development trend of thyristor is high voltage and high current. At present, the thyristors used in China's UHV DC transmission projects have reached 6300A / 7500V or 5500A / 8500V, and the diameter of a single device chip is more than 6 inches. The large-diameter thyristor with such a power level has created a world record, and its applications are all in the field of major strong current control. They must withstand a high rate of current rise during the turn-on transient, entering the on-state through a very large forward current. The blocking recovery transient must withstand a high voltage rise rate and enter an off-state to block extremely high forward and reverse voltages. A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74H01L29/10
CPCH01L29/1012H01L29/102H01L29/74
Inventor 王正鸣高山城郭永忠张猛
Owner 西安派瑞功率半导体变流技术股份有限公司
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