Base region resistance control thyristor structure and manufacturing method thereof

Abstract

The present invention discloses a base region resistance control thyristor structure. A p base region is arranged in the center of the upper portion of an n- drift region, an n+ cathode region is arranged in the center of the upper portion of the p base region, n regions are arranged on the two sides of the p base region respectively, a p++ shunt region is arranged in the n region on the right side, and an aluminum layer on the upper surface of the p++ shunt region is connected with an aluminum layer on the upper surface of the n+ cathode region to form a cathode K; a gate oxide layer is arranged on the upper surfaces of the n regions on the two sides, the p base region, part of the n+ cathode region and part of the p++ shunt region, and a gate G is arranged on the upper surface of the gate oxide layer; a phosphorosilicate glass layer is arranged between the cathode electrode K and the grid electrode G; and an n FS layer, a p+ anode region and a metallized anode A are sequentially arranged on the lower surface of the n- drift region. The invention further discloses a manufacturing method of the base region resistance control thyristor. The method is low in process cost and convenient to popularize and use, and can better meet the application requirements in the fields of pulse power and solid-state circuit breakers.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a base resistance controlled thyristor structure, and also relates to a manufacturing method of the base resistance controlled thyristor structure. Background technique [0002] The traditional MOS-controlled thyristor (MCT) has the advantages of high input impedance, easy driving, low on-state voltage drop and conduction loss, but the process is difficult; the traditional base resistance controlled thyristor (BRT) can solve the difficult MCT process. The problem is that its on-state voltage drop is also similar to MCT, but due to the discharge of hole current when BRT is turned on, it is difficult to turn on and cannot guarantee a high current rise rate. Contents of the invention [0003] The purpose of the present invention is to provide a base resistance controlled thyristor, which solves the problem that the device structure in the prior art has a low turn...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a base resistance controlled thyristor, which solves the problem that the device structure in the prior art has a low turn-on current rise rate and peak current due to the negative resistance phenomenon, and cannot meet the application requirements in the field of pulse power and solid-state circuit breakers. question

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