A resistive switch unit with a transparent upper electrode and its conductive filament positioning method

Abstract

The invention provides a resistive variable unit with a transparent upper electrode and a positioning method for conductive filaments thereof, belonging to the field of resistive variable memories. The resistive variable unit is composed of a lower electrode, an insulating medium layer and an upper electrode in sequence from bottom to top; wherein, the material of the upper electrode is transparent indium tin oxide. The conductive filament positioning method is as follows: Spectral test and analysis is carried out on the material used in the insulating medium layer of the resistive switch unit with a transparent upper electrode, and the luminous wavelength corresponding to the peak luminous intensity of the oxygen vacancy of the material is obtained; the ultraviolet laser is used as the excitation source, and the The microscopic objective lens focuses the ultraviolet laser, scans the transparent upper electrode through photoluminescence through the focused ultraviolet laser, and obtains a two-dimensional image of the luminescence intensity of the upper electrode corresponding to the oxygen vacancy; reads the spectrum of each point in the upper electrode, and the most luminescent The strong position is the position where the end of the conductive filament is connected to the upper electrode. The invention does not need to peel off electrodes, uses optical means to perform positioning and scanning on conductive filaments, and has low cost.

Description

technical field [0001] The invention belongs to the field of resistive variable memory, and specifically proposes a resistive variable unit with a transparent upper electrode and a positioning method for conductive filaments thereof. Background technique [0002] As an important carrier and medium for the development of Internet technology in the 21st century, semiconductor memory is playing an increasingly important role in various fields. As a representative of semiconductor memory, random access memory (RAM) has gradually replaced traditional mechanical hard disks and optical disks in data storage and has become the mainstream storage carrier because it can access any storage unit at the same speed. Random access memory can be divided into two categories according to the length of time the stored data is kept, namely volatile and non-volatile memory. Non-volatile memory (NVM) is widely used in data storage of various electronic products because of its good data retention...

AI Technical Summary

Problems solved by technology

The stripped resistive switching unit needs to be directly transferred to the light emission electron microscope in a high vacuum environment, which greatly increases the cost

In addition, the x-rays in the photoemission electron microscope come from high-energy synchrotron radiation sources, and synchrotron radiation devices are large and expensive

At the same time, the stripping process of the upper electrode destroys the resistive variable unit, so only the conductive filaments in a certain resistance state can be observed, and the follow-up operation and research on the resistive variable unit cannot be performed.

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