Component manufacturing method
A technology for component manufacturing and component department, which is applied in the manufacturing/assembly of electrical components, piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. Highly productive effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 Embodiment approach 》
[0014] One embodiment of the device manufacturing method of the present invention will be described with reference to the drawings.
[0015] figure 1 It is a figure which shows the process flow of the element manufacturing method. figure 2 It is a sectional view showing each process in the middle of manufacturing the element. image 3 It is a plan view showing each process in the middle of manufacturing the element. In addition, these figures are schematic figures for explanation and do not reflect actual dimensional ratios. Such as figure 1 As shown, the device manufacturing method includes a first step, a second step, a third step, a fourth step, and a fifth step.
[0016] Before the first step, the workpiece 100 is prepared. The workpiece 100 has a reference surface, and for example, semiconductor substrates such as silicon (Si), crystals, piezoelectric substrates such as lithium tantalate substrates (LT substrates), lithium niobate substrates (LN substrates), and sin...
no. 2 Embodiment approach 》
[0055] A first etching step may be added before the first step in the above-mentioned embodiment. The purpose of the first etching step is to remove residual stress on the surface and foreign substances such as particles when performing partial processing. Therefore, chemical methods may be used instead of physical methods in the first etching step. More specifically, a dry etching solution suitable for the material of the workpiece 100 is used to remove the surface layer where residual stress remains. In order to uniformly remove such a layer, an isotropic etchant rather than an anisotropic etchant is used as the etchant. In addition, after performing dry etching, sufficient cleaning is performed in order to remove etching residues.
[0056] In particular, the first etching step may be performed when a machined member is used as the workpiece 100 . For example, when using a crystal wafer obtained by slicing a raw ore of an artificial crystal at a desired cutting angle with...
no. 3 Embodiment approach 》
[0060] The second etching step may be provided after the third step in the first embodiment and the second embodiment described above. The purpose of the second etching step is to modify the state of the partially processed surface. Therefore, chemical methods may be used instead of physical methods in the second etching step. More specifically, the surface layer is removed using a dry etching solution that matches the material of the workpiece 100 . In order to uniformly remove such a layer, an isotropic etchant rather than an anisotropic etchant is used as the etchant. In addition, after performing dry etching, it is necessary to perform sufficient cleaning in order to remove etching residues.
[0061] In particular, when plasma is used in the third step, there is a risk that minute unevenness may be generated on the surface, or a part of the components of the first and second industrial gases and carrier gas may enter the surface layer of the workpiece 100. . In additio...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More