Ion implantation abnormal detection structure and its preparation method, and detection method
A technology of ion implantation and detection structure, which is used in semiconductor/solid-state device testing/measurement, semiconductor/solid-state device components, semiconductor devices, etc. The effect of improving process conditions
Active Publication Date: 2020-02-07
SEMICON MFG INT (SHANGHAI) CORP +1
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[0005] The object of the present invention is to provide a detection structure for abnormal ion implantation and its preparation method, as well as a detection method, to solve the problem of determining whether the channeling effect of ion implantation is determined in the device structure in the prior art, and to determine which layer of ion implantation caused by injection
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[0038] The structure for detecting abnormal ion implantation, its preparation method, and detection method of the present invention will be described in more detail below in conjunction with schematic diagrams, which represent preferred embodiments of the present invention, and it should be understood that those skilled in the art can modify the present invention described herein. invention, while still realizing the beneficial effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0039] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details...
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The invention provides an abnormal ion injection detection structure and detection method and a fabrication method of the detection structure. The abnormal ion injection detection structure comprises a semiconductor substrate, wherein the semiconductor substrate comprises a bottom semiconductor layer, a buried oxide layer and a top semiconductor layer which are sequentially laminated, the semiconductor substrate comprises a first region and a second region, a plurality of ion injection regions are arranged in the top semiconductor layer of the first region, a plurality of monitoring points are arranged in the bottom semiconductor layer of the second region and are in one-to-one corresponding to the ion injection regions, and each ion injection region and each monitoring point which are corresponding to each other are formed by employing the same-step ion injection process. In the abnormal ion injection detection structure, whether an ion injection channel effect exists in the formed device is determined, which step of ion injection when the ion injection channel effect is generated can be accurately determined, so that a reference is provided for subsequently improving a process condition, and the device performance is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a detection structure and a detection method for abnormal ion implantation. Background technique [0002] The accuracy of ion implantation (implant) in semiconductor manufacturing will directly affect the quality of many electrical parameters of the product. Due to factors such as machine abnormalities and process design defects, the energy, dose or angle of implanted ions during the ion implantation process deviates. In addition, the ion implantation channeling effect will also affect the electrical parameters of the device. The ion implantation channeling refers to the phenomenon that the implanted ions tunnel along the lattice channel to the region where ions should not be implanted. When the region where ions should not be implanted is doped with ions, electrical deviations will occur, resulting in failures such as leakage and short circuit of the device....
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IPC IPC(8): H01L23/544H01L21/66
CPCH01L22/14H01L22/30
Inventor 史江北
Owner SEMICON MFG INT (SHANGHAI) CORP