GaN hexagonal-pyramid array-based LED epitaxial structure and preparation method therefor

Abstract

The invention relates to the field of a semiconductor, and discloses an LED epitaxial structure. The LED epitaxial structure comprises a substrate, a nucleating layer, a non-doped GaN layer, an n type GaN layer and a porous SiN<x> layer on the n type GaN layer, and also comprises an n type GaN hexagonal-pyramid array formed in the holes of the porous SiN<x> layer, and quantum dots on the peak of the hexagonal pyramid, quantum lines on the six ridges and a multi-quantum-well layer on six semi-polar (10-11) crystal surfaces, and a p type GaN filling layer at the tail part; and the GaN hexagonal pyramid and the quantum dots / lines / well layer at different positions thereon form the three-dimensional core-shell structure. The structure is large in light emitting area and high in light extracting efficiency; in addition, due to influences of different In contents and polarization effects and other factors, the light emitting wavelengths of the quantum dots / lines / well structures are also different; through reasonable control, white light emission can be realized; in the preparation method of the GaN hexagonal pyramid array, substrate patterning is not needed, so that the technological process is simple; and meanwhile, the grown GaN crystals are high in quality, so that the luminous efficiency of the LED can be improved effectively.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial structure based on a GaN hexagonal pyramid array and a preparation method thereof. Background technique [0002] Today, III-V semiconductor materials are booming and have entered people's lives in many fields. Among them, GaN, as an important material for preparing high-efficiency LEDs, has attracted many people's attention. Compared with traditional materials, GaN, as a representative of the third-generation semiconductor materials, has excellent physical and chemical properties, such as: wide band gap, good thermal stability, high electron mobility, and a direct band gap semiconductors. Therefore, GaN-based blue LEDs have been widely used in production and life, bringing convenience to people's lives and greatly reducing energy consumption. However, the potential of GaN materials is far more than that, and GaN-based LEDs still have a lot of room for im...

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Problems solved by technology

[0003] For this reason, the present invention mainly provides an LED epitaxial structure based on a hexagonal pyramid array and its preparation method, and aims to solve the problems of poor crystal quality, high preparation cost, poor color rendering, strong dependence on phosphor powder, and low luminous efficiency of existing LED epitaxial structures. And other issues

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