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Radiant power enhanced type miniaturized terahertz source

A radiated power and enhanced technology, which is applied in the field of terahertz communication and detection, can solve the problem of low radiated power of terahertz sources, and achieve the effect of high modulation rate and easy integration

Active Publication Date: 2017-11-07
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of low radiation power of the above-mentioned terahertz source, and provide an RTD terahertz source loaded with a low-pass filter bias circuit and a high-resistance dielectric lens

Method used

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Embodiment Construction

[0018] The specific implementation manner of the embodiment of the present invention can refer to figure 1 shown in front view and figure 2 Side view shown. See the description below for details:

[0019] refer to figure 1 , the embodiment of the present invention includes a coplanar stripline low-pass filter 1, an on-chip antenna 2, a resonant tunneling diode RTD 3 and a high-resistance dielectric lens 5; a coplanar stripline lowpass filter 1, a resonant tunneling diode 3 and an on-chip The antenna 2 shares electrodes, and the high-resistance dielectric lens 5 is located on the lower surface of the substrate 4 of the resonant tunneling diode (RTD) 3 .

[0020] The coplanar stripline low-pass filter 1 is combined with the resonant tunneling diode 3 to form an oscillator; the coplanar stripline lowpass filter 1 is used to provide DC bias for the resonant tunneling diode 3, and is also used for reflection resonance The terahertz wave generated by the tunneling diode 3; the ...

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Abstract

The invention relates to the field of terahertz communication and detection, and discloses a radiant power enhanced type miniaturized terahertz source loaded with a lowpass filtering bias circuit and a high resistance dielectric lens. The radiant power enhanced type miniaturized terahertz source comprises a resonant tunneling diode (RTD), a coplanar stripline lowpass filter, an on-chip antenna and a high resistance dielectric lens, wherein the coplanar stripline lowpass filter, the on-chip antenna and the RTD share the same electrode, the high resistance dielectric lens is highly attached to the lower surface of a substrate of the RTD, and the coplanar stripline lowpass filter is adopted as a biasing circuit for providing direct current bias for the RTD; the RTD is adopted as an oscillating source for generating terahertz waves; the on-chip antenna is adopted as a radiation unit for radiating terahertz waves; the high resistance dielectric lens is used for gathering energy, and the antenna gain is improved. The radiation power of the RTD terahertz source can be enhanced, and the great application value is achieved in the field of ultrahigh speed wireless communication and terahertz detection.

Description

technical field [0001] The invention relates to the field of terahertz communication and detection, in particular to a radiation power enhanced resonant tunneling diode RTD terahertz source loaded with a low-pass filter bias circuit and a high-resistance dielectric lens. Background technique [0002] Terahertz waves refer to electromagnetic waves with a frequency in the range of 0.1-10THz. The energy of photons with a frequency of 1THz is 0.004eV. The vibration and rotation energy levels of many molecules are in the terahertz frequency band. Due to the high frequency, low energy, transmittance and spectral resolution of terahertz waves, it has important application prospects in the fields of indoor short-distance high-speed communication, inter-satellite high-speed communication, terahertz detection, imaging and other fields, attracting a large number of scientific research workers. It conducts in-depth research. [0003] At present, terahertz parametric sources and optical...

Claims

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Application Information

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IPC IPC(8): G02F1/35H01S1/02
CPCG02F1/35H01S1/02
Inventor 李勇宋瑞良
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP